Datasheet

DocID18080 Rev 5 7/15
SPV1040 Electrical characteristics
T
shutdown
Overtemperature
threshold for turn OFF
Temperature increasing 155 °C
Overtemperature
threshold for turn ON
Temperature decreasing 130 °C
1. According to the absolute maximum ratings the output charge voltage cannot be above 4.8 V but if an
higher Vout up to 5.2 V is needed, a Schottky diode must be placed between the Lx and Vout pins as
shown in Figure 2. In such way the Schottky diode in parallel to the embedded P-channel MOSFET will
reduce the voltage drop between the VLX pin and the VOUT pin determined by the body diode when the
internal PMOS is OFF from 0.7 V down to 0.3 V.
2. Given T
j
= T
a
+ R
thJA
x P
D
, and assuming R
thJA
= 135°C/W, and that in order to avoid device destruction
Tjmax must be
≤ 125 °C, and that in the worst conditions T
A
= 85 °C, the power dissipated inside the
device is given by:
Therefore, if in the worst case the efficiency is assumed to be 90%, then P
IN-MAX
= 3.3 W and P
OUT-MAX
= 3 W.
Table 5. Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit
P
D
T
j
T
a
–
R
thJA
------ ---- -------≤ 295mW=