Datasheet

Characteristics SMX1J
2/11 Doc ID 16180 Rev 3
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Figure 3. Pulse waveform
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
T
j
initial = T
amb
85 W
T
stg
Storage temperature range -65 to +150 °C
T
j
Operating junction temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
VV V
I
RM
I
R
I
PP
V
I
I
F
V
V
Slope = 1/R
d
VV
CL
V
BR
RM
V
F
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
V = Clamping voltage
R = Dynamic impedance
I = Peak pulse current
I = Breakdown current
T = Voltage temperature coefficient
V = Forward voltage drop
BR
RM RM
RM
CL
d
PP
R
F
α
Table 2. Electrical characteristics - parameter values (T
amb
= 25 °C)
Type
I
RM
max@V
RM
V
BR
@I
R
min
(1)
V
CL
@I
PP
(2)
10/1000 µs
R
D
(3)
10/1000 µs
V
CL
@I
PP
(2)
8/20 µs
R
D
(3)
8/20 µs
αT
(4)
25 °C 85 °C min max max max
µA V V mA V A Ω VA Ω 10-4/ °C
SMX1J7.5A 1 2 7.5 8.3 1 14 6.2 0.3 20 40 0.2 6.5
1. Pulse test : t
p
< 50 ms
2. Surge capability given for both directions for unidirectional and bidirectional types
3. To calculate maximum clamping voltage at other surge level, use the following formula
V
CLmax
= V
CL
- R
D
x ( I
PP
- I
PPappli
) where I
PPappli
is the surge current in the application
4. To calculate V
BR
or V
CL
versus junction temperature, use the following formule:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 + αT x (T
j
– 25))
V
CL
@ T
j
= V
CL
@ 25 °C x (1 + αT x (T
j
– 25))
Repetitive pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
t
r
t
p
%Ipp
0
50
100