Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsDiodesTVS Diode

September 2008 Rev 1 1/8

SMTYF

Low forward voltage TVS Transky™

Features

■ High peak pulse power:

– 600 W (10/1000 µs)

– 4000 W (8/20 µs)

■ Stand-off voltage 5 or 12 V

■ Low forward voltage: 0.48 V @ 0.85 A @ 25 °C

■ Low clamping factor V

■ Fast response time

■ Very thin package (1.0 mm overall component

height)

■ ECOPACK2

halogen-free package

Complies with the following standards:

■ IEC 61000-4-2 level 4:

– 15 kV (air discharge)

– 8 kV (contact discharge)

■ MIL STD 883E- Method 3015-7: class 3C

– Human body model

Description

The Transky is designed specifically for portable

equipment and miniaturized electronic devices

subject to ESD transient overvoltages.

The Transky combines the performance of a

Transil™ or TVS (transient voltage supressor) and

low forward voltage Schottky diode in a monolithic

structure.

TM: Transky is a trademark of STMicroelectronics.

TM: Transil is a trademark of STMicroelectronics.

Unidirectional

SMAflat

www.st.com

Summary of content (8 pages)

PAGE 1
SMTYF Low forward voltage TVS Transky™ Features ■ High peak pulse power: – 600 W (10/1000 µs) – 4000 W (8/20 µs) ■ Stand-off voltage 5 or 12 V ■ Low forward voltage: 0.48 V @ 0.85 A @ 25 °C ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package (1.
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Characteristics SMTYF 1 Characteristics Table 1.
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SMTYF Characteristics Figure 1. Definition of Ipp pulse %IPP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) 100 50 0 tr Figure 2. t tp Relative peak power dissipation versus initial junction temperature Figure 3. PPP[T j initial] / PPP[T j initial=25°C] Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) PPP(kW) 1.1 100.0 Tj initial = 25 °C 1.0 0.9 0.8 10.0 0.7 0.6 0.5 0.4 1.0 0.3 0.2 Tj initial (°C) 0.1 tp(ms) 0.0 0.
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Characteristics Figure 4. SMTYF Clamping voltage versus peak pulse current (exponential waveform, maximum values) 1.E+03 IPP(A) Tj initial=25 °C SMTYF5.0A SMTYF12A 1.E+02 1.E+01 1.E+00 tp = 8/20 µs tp = 10/1000 µs VCL(V) 1.E-01 5 Figure 5. 1.E+04 10 15 Junction capacitance versus reverse applied voltage (typical values) 20 Figure 6. C(pF) 1.E+01 25 Forward voltage drop versus forward current (typical values) IFM(A) F=1 MHz VOSC=30 mVRMS Tj=25 °C 1.E+00 SMTYF5.
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SMTYF Characteristics Figure 7. Average power dissipation versus ambient temperature Figure 8. P(W) 4.5 1.00 Relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board FR4, SCu = 1 cm2) Zth(j-a)/Rth(j-a) Rth(j-a)=Rth(j-l) On recommended pad layout 4.0 3.5 3.0 0.10 2.5 2.0 1.5 0.01 Rth(j-a)=200 °C/W (PCB FR4, recommended pad layout) 1.0 0.5 tp(S) Tamb(°C) 0.0 0 Figure 9.
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Package information 2 SMTYF Package information ● Case: JEDEC DO-221AC molded plastic over Planar junction ● Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 ● Polarity: Band indicates cathode ● Flammability: Epoxy rated UL94V-0 ● RoHS package In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect.
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SMTYF 3 Ordering information Ordering information Table 6. 4 Ordering information Order code Marking SMTYF5.0A YF5.0 SMTYF12A YF12 Package Weight Base qty Delivery mode SMAflat 0.035 g 10 000 Tape and reel Revision history Table 7.
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SMTYF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.