Datasheet

SMP30 Characteristics
Doc ID 5603 Rev 7 5/9
Figure 4. On-state voltage versus on-state
current (typical values)
Figure 5. Relative variation of holding
current versus junction
temperature
012345678910
1
2
5
10
20
50
V (V)
T
I (A)
T
Tj=25°C
-40 -20 0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
I [T ] / I [T =25°C]
Hj Hj
Figure 6. Relative variation of breakover
voltage versus junction
temperature
Figure 7. Relative variation of leakage
current versus reverse voltage
applied (typical values)
-40 -20 0 20 40 60 80 100
0.90
0.95
1.00
1.05
1.10
62 V
270 V
V [T ] / V [T =25°C]
BO j BO j
T (°C)
j
25 50 75 100
125
1
10
100
1000
2000
I [T ] / I [T =25°C]
RM j RM j
V=V
RRM
T (°C)
j
Figure 8. Variation of thermal impedance
junction to ambient versus pulse
duration
Figure 9. Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-1
1E+0
1E+1
1E+2
Z (°C/W)
th(j-a)
t (s)
p
Printed circuit board FR4,
copper thickness = 35 µm,
recommended pad layout
1 2 5 10 20 50 100 300
0.0
0.5
1.0
1.5
2.0
2.5
V (V)
R
C[V ] / C[V =50V]
RR
Tj=25°C
F=1MHz
VRMS=1V