Datasheet

SMP30 Characteristics
Doc ID 5603 Rev 7 3/9
Table 2. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
I
PP
Repetitive peak pulse current
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
30
70
35
40
45
70
100
A
I
FS
Fail-safe mode : maximum current
(1)
8/20 µs 2.5 kA
I
TSM
Non repetitive surge peak on-state current (sinusoidal)
t = 0.2 s
t = 1 s
t = 2 s
t = 15 mn
14
10.5
9
3
A
I²t I²t value for using
t = 16.6 ms
t = 20 ms
5.7
4.9
A²s
T
stg
Storage temperature range -55 to + 150 °C
T
j Maximum junction temperature 150 °C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
1. In fail safe mode, the device acts as a short circuit.
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient (with recommended footprint) 120 °C/W
R
th(j-l)
Junction to leads 30 °C/W
Table 4. Electrical characteristics - definitions (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
RM
Leakage current
I
PP
Peak pulse current
I
BO
Breakover current
I
H
Holding current
V
R
Continuous reverse voltage
I
R
Leakage current at V
R
C Capacitance