Datasheet
Table Of Contents
- 1 Characteristics
- Table 1. Absolute ratings (Tamb = 25 C)
- Table 2. Thermal resistances
- Table 3. Electrical characteristics - parameter definitions (Tamb = 25 C)
- Table 4. Electrical characteristics - parameter values (Tamb = 25 C)
- Figure 1. Definition of IPP pulse
- Figure 2. Peak power dissipation versus initial junction temperature
- Figure 3. Peak pulse power versus exponential pulse duration (Tj initial = 25 C)
- Figure 4. Clamping voltage versus peak pulse current (exponential waveform, maximum values)
- Figure 5. Junction capacitance versus reverse applied voltage (typical values)
- Figure 6. Peak forward voltage drop versus peak forward current (typical values)
- Figure 7. Relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board FR4, SCu = 1 cm2)
- Figure 8. Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board FR4, eCu = 35 µm)
- Figure 9. Leakage current versus junction temperature (typical values)
- 2 Ordering information scheme
- 3 Package information
- 4 Ordering information
- 5 Revision history

Characteristics SMM4F
2/10
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage (IEC 61000-4-2 contact discharge) 30 kV
P
PP
Peak pulse power dissipation
(1)
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
T
j
initial = T
amb
400 W
P Power dissipation on infinite heatsink T
amb
= 125 °C 2.5 W
I
FSM
Non repetitive surge peak forward current
for unidirectional types
t
p
= 10 ms
T
j
initial = T
amb
30 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range -55 to +175 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads 20
°C/W
R
th(j-a)
Junction to ambient on PCB with recommended pad layout 250
Table 3. Electrical characteristics - parameter definitions (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
I
R
Breakdown current
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
R
D
Dynamic resistance
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F