Datasheet

Characteristics SMLVT3V3
2/7 Doc ID 4146 Rev 4
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
T
j
initial = T
amb
600 W
P Power dissipation on infinite heatsink T
amb
= 50 °C 6 W
I
FSM
Non repetitive surge peak forward current
for unidirectional types
t
p
= 10 ms
T
j
initial = T
amb
100 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Junction temperature range -25 to +175 °C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads 20 °C/W
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout 100 °C/W
Table 3. Electrical characteristics - parameters (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ VRM
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
R
D
Dynamic impedance
Table 4. Electrical characteristics - values (T
amb
= 25 °C)
Type
I
RM
@V
RM
Max
V
BR
@I
R
(1)
Min
1. Pulse test : t
p
< 50 ms
V
CL
@I
PP
10/1000 µs
Max
V
CL
@I
PP
8/20 µs
Max
αT
(2)
Max
2. V
BR
= αT x (T
amb
-25) x V
BR (25°C)
C
(3)
Typ.
3. V
R
= 0 V, F = 1 MHz
µAVVmAVAVA10-4/ °CpF
SMLVT3V3 200 3.3 4.1 1 7.3 50 10.3 200 -5.3 5200
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F