Datasheet

SM2T
3/6
Figure 1: Peak pulse power versus exponential
pulse duration
Figure 2: Relative variation of peak pulse
power versus initial junction temperature
Figure 3: Average power dissipation versus
ambient temperature
Figure 4: Variation of thermal impedance
junction to ambient versus pulse duration
Figure 5: Thermal resistance junction to
ambient versus copper surface under tab
Figure 6: Reverse leakage current versus
junction temperature (typical values)
1.E+01
1.E+02
1.E+03
1.E+04
0.01 0.10 1.00 10.00
P (W)
PP
t (ms)
p
T initial = 25°C
j
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 175
%
T (°C)
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
Printed circuit board FR4, recommended pad layout
T (°C)
AMB
P(W)
T=
AMB
T
tab
0.1
1.0
10.0
100.0
1000.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
S=2cm²
S=0.135cm²
Z/R
th(j-c) th(j-c)
t (s)
p
0
50
100
150
200
250
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
S(cm²)
R (°C/W)
th(j-a)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 25 50 75 100 125 150
T (°C)
j
I (nA)
R
V=V
RRM