Datasheet

PM6641 Electrical characteristics
Doc ID 13510 Rev 3 13/47
Symbol Parameter Test condition
Values
Unit
Min Typ Max
V
TT
LDO section – DDR2/3 rails
PG_VTT_TH
Power Good upper threshold 106 110 114 %
Power Good lower threshold 86 90 94 %
I
LDOIN,ON
LDO input bias current in full-
ON state
EN_1S8 = EN_VTT = +5 V,
no load on VTT
110
μAI
LDOIN,STR
LDO input bias current in
suspend-to-RAM state
EN_1S8 = +5 V, EN_VTT = 0 V,
no load on VTT
10
I
LDOIN,STD
LDO input bias current in
suspend-to-disk state
EN_1S8 = EN_VTT = 0 V,
no load on VTT
3
I
VTTFB, BIAS
VTTFB bias current
EN_1S8 = EN_VTT = +5 V,
V
VTTFB
= V
VOUT_1S8
/2
1
μAI
VTTFB, LEAK
VTTFB leakage current
EN_1S8 = +5 V, EN_VTT = 0 V,
V
VTTFB
= V
VOUT_1S8
/2
1
I
VTT,LEAK
VTT leakage current
EN_1S8 = +5 V, EN_VTT = 0 V,
V
VTT
= V
VOUT_1S8
/2
-10 10
V
VTT
LDO linear regulator output
voltage (DDR2)
EN_1S8 = EN_VTT = +5 V,
I
VTT
0 A, V
LDOIN
= 1.8 V
0.9
V
LDO linear regulator output
voltage (DDR3)
EN_1S8 = EN_VTT = +5 V,
I
VTT
= 0 A, V
LDOIN
= 1.5 V
0.75
LDO output accuracy respect to
VTTREF, V
LDOIN
=1.8 V
EN_1S8 = EN_VTT = +5 V,
-1 mA < I
VTT
< 1 mA
-20 20
mV
EN_1S8 = EN_VTT = +5 V,
-1 A < I
VTT
< 1 A
-25 25
EN_1S8 = EN_VTT = +5 V,
-2 A < I
VTT
< 2 A
-35 35
I
VTT,CL
LDO source current limit
V
VTT
< 1.10*(V
VOUT_1S8
/2) 2 2.3 3
A
V
VTT
> 1.10*(V
VOUT_1S8
/2) 1 1.25 1.5
LDO sink current limit
V
VTT
> 0.90*(V
VOUT_1S8
/2) -3 -2.3 -2
V
VTT
< 0.90*(V
VOUT_1S8
/2) -1.5 -1.25 -1
VTTREF section – DDR2/3 rails
V
VTTREF
VTTREF output voltage I
VTTREF
= 0A, V
VOUT_1S8
= 1.8 V 0.9 V
VTTREF output voltage
accuracy relative to
V
VOUT_1S8
/2
-15 mA < I
VTTREF
< +15 mA,
V
VOUT_1S8
= 1.8 V
-2 2 %
I
VTTREF
VTTREF short circuit source
current
V
VOUT_1S8
= 1.8 V, V
VTTREF
= 0 V 40
mA
VTTREF short circuit sink
current
V
VOUT_1S8
= 1.8 V, V
VTTREF
= 1.8 V -40
Table 6. Electrical characteristics (continued)