Datasheet

Electrical characteristics PM6641
12/47 Doc ID 13510 Rev 3
Symbol Parameter Test condition
Values
Unit
Min Typ Max
LS turn-on VFB_1SX threshold
with internal divider
VFB_S1X to OUT_X 0.2
V
LS turn-on VFB_1SX threshold
with external divider
VFB_S1X to external divider 0.16
Power management section – chipset 1.05 V rail
EN_1S05 turn-off level
V
AVCC
= +5 V
0.8
V
EN_1S05 turn-on level 2
Switching node – DDR2/3 rails
t
Onmin
Minimum on-time 200 ns
RDSon,HS High side PMOS Ron 90 130
mΩ
RDSon,LS Low side NMOS Ron 80 120
I
INLEAK
VIN_1S8 leakage current
V
AVCC
= V
VCC
= 5 V,
all EN_1S8 low
V
IN
=
+5 V
1
μA
V
IN
=
+3.3 V
1
Peak current limit R
CSNS
= 50 kΩ 6.1 A
Soft-end section – DDR2/3 rails
VDDQ discharge resistance in
non-tracking discharge mode
25 Ω
VTTREF discharge resistance
in non-tracking discharge mode
200 Ω
VTTFB discharge resistance in
non-tracking discharge mode
40 Ω
V
FB_1SX
threshold for final
tracking/Non-tracking discharge
transition with internal divider
VFB_S1X to OUT_X 0.340 V
V
FB_1SX
threshold for final
tracking/Non-tracking discharge
transition with external divider
VFB_S1X to external divider 0.160 V
Power management section – DDR2/3 rails
DSCG turn-off level
V
AVCC
= +5 V
1.5
V
DSCG turn-on level 3.5
EN_1S8 (S5), EN_VTT (S3)
Turn-Off Level
V
AVCC
= +5 V
0.8
EN_1S8 (S5), EN_VTT (S3)
Turn-On Level
2
Table 6. Electrical characteristics (continued)