Datasheet

PM6641 Electrical characteristics
Doc ID 13510 Rev 3 11/47
Symbol Parameter Test condition
Values
Unit
Min Typ Max
Thermal shutdown
T
SHDN
Thermal shutdown threshold 150
°C
Thermal shutdown hysteresis 15
Switching node – chipset 1.5 V rail
t
Onmin
Minimum on-time 200 ns
RDSon,HS High side PMOS Ron 150 220
mΩ
RDSon,LS Low side NMOS Ron 100 160
I
INLEAK
VIN_1S5 leakage current
V
AVCC
= V
VCC
= +5 V, all
EN_1S5 low
V
IN
=
+5 V
1 μA
V
IN
=
+3.3 V
Peak current limit R
CSNS
= 50 kΩ 3.9 A
Soft-end section – chipset 1.5 V rail
Discharge resistance 25 Ω
LS turn-on VFB_1SX threshold
with internal divider
VFB_S1X to OUT_X 0.29
V
LS turn-on VFB_1SX threshold
with external divider
VFB_S1X to external divider 0.16
Power management section – chipset 1.5 V rail
EN_1S5 turn-off level
V
AVCC
= 5 V
0.8
V
EN_1S5 turn-on level 2
Switching node – chipset 1.05 V rail
t
Onmin
Minimum on-time 180 ns
RDSon,HS High side PMOS Ron 100 160
mΩ
RDSon,LS Low side NMOS Ron 70 110
I
INLEAK
VIN_1S05 leakage current
V
AVCC
= V
VCC
= +5 V, all
EN_1S05 low
V
IN
=
+5 V
1
μA
V
IN
=
+3.3 V
1
Peak current limit R
CSNS
= 50 kΩ 5.1 A
Soft end section – chipset 1.05 V rail
Discharge resistance 25 Ω
Table 6. Electrical characteristics (continued)