Datasheet

PKC-136
2/5
Symbol Parameter Tests conditions
Value
Unit
Min. Typ. Max.
I
R
Reverse leakage current V
R
=V
RRM
T
j
= 25°C
3 µA
T
j
= 125°C
320
V
RRM
Repetitive Peak Reverse
Voltage
T
j
= 25°C
700 V
trr
Reverse Recovery Time I
F
=1A dI
F
/ dt = -50A/µs
V
R
= 30V
45 ns
V
FP
Peak Forward Voltage I
F
=3A
dI
F
/ dt = 100A/µs
T
j
= 25°C
12 V
T
j
= 125°C
18
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max.
I
RM
Leakage current V
R
= 136V
T
j
= 25°C 1 µA
T
j
=125°C 10
V
BR
Breakdown voltage I
R
= 1mA
pulse test < 50ms
T
j
= 25°C 150 160 170 V
R
d
Dynamical Resistance tp < 500ns
between I = 0.5Amps
and I = 1.5Amps
T
j
= 125°C 4 Ω
αT
Temperature
Coefficient
10.8 10
-4
/°C
V
sCL
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219 V
ELECTRICAL CHARACTERISTICS TRANSIL
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage V
BR
of the transil versus the operating junction temperature and use the equation (3) to calculate
the clamping voltage versus the transil current Ipp and the temperature.
∆
VTTV C
BR j BR
=− °α()()25 25
(1)
VT V C V
BR j BR BR
() ( )=°+25 ∆
(2)
V T V T Rd Ipp
CL j BR j
() () .=+
(3)
CALCULATION OF THE CLAMPING VOLTAGE:
Symbol Parameter Typical Value Unit
C
Total Parasitic capacitance 1MHz 30mV
35 pF
CAPACITANCE