Datasheet

DC and AC parameters M95640-W M95640-R M95640-DF
34/49 Doc ID 16877 Rev 17
Table 17. DC characteristics (M95640-R, device grade 6)
Symbol Parameter
Test conditions in addition to those
defined in Ta bl e 12
(1)
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
± 2 µA
I
LO
Output leakage
current
S
= V
CC
, voltage applied on Q = V
SS
or V
CC
± 2 µA
I
CC
Supply current
(Read)
V
CC
= 1.8V, C = 0.1V
CC
or 0.9 V
CC
,
at 2 MHz, Q = open
2
mA
V
CC
= 1.8V, C = 0.1V
CC
or 0.9 V
CC
,
at 5 MHz, Q = open
2
(2)
I
CC0
(3)
Supply current
(Write)
V
CC
= 1.8 V, during t
W
, S = V
CC
5mA
I
CC1
Supply current
(Standby)
V
CC
= 1.8 V, S = V
CC
, V
IN
= V
SS
or V
CC
1µA
V
IL
Input low voltage 1.8 V ≤ V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage 1.8 V ≤ V
CC
< 2.5 V 0.75 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 0.15 mA, V
CC
= 1.8 V 0.3 V
V
OH
Output high voltage I
OH
= –0.1 mA, V
CC
= 1.8 V 0.8 V
CC
V
1. If the application uses the M95640-R device with 2.5 V < V
CC
< 5.5 V and -40 °C < TA < +85 °C, please refer to Table 16:
DC characteristics (M95640-W, device grade 6), rather than to the above table.
2. Only for M95640 devices identified by process letter K.
3. Characterized only, not tested in production.