Datasheet

M95640-W M95640-R M95640-DF DC and AC parameters
Doc ID 16877 Rev 17 33/49
Table 16. DC characteristics (M95640-W, device grade 6)
Symbol Parameter
Test conditions in addition to those
defined in Ta ble 9
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
± 2 µA
I
LO
Output leakage
current
S
= V
CC
, V
OUT
= V
SS
or V
CC
± 2 µA
I
CC
Supply current
(Read)
V
CC
= 2.5 V, f
C
= 5 MHz,
C=0.1V
CC
/0.9 V
CC,
Q = open
3
mA
V
CC
= 2.5 V, f
C
= 10 MHz,
C=0.1V
CC
/0.9 V
CC,
Q = open
2
(1)
1. Only for the device identified by process letter K.
V
CC
=5.5V, f
C
= 20 MHz,
C=0.1V
CC
/0.9 V
CC,
Q = open
5
(1)
I
CC0
(2)
2. Characterized only, not tested in production.
Supply current
(Write)
During t
W
, S = V
CC
, 2.5 V < V
CC
< 5.5 V 5 mA
I
CC1
Supply current
(Standby)
S
= V
CC
, V
CC
= 5.5 V
V
IN
= V
SS
or V
CC
3
(1)
µA
S = V
CC
, V
CC
= 5.0 V
V
IN
= V
SS
or V
CC
2
S = V
CC
, V
CC
= 2.5 V
V
IN
= V
SS
or V
CC
2
(3)
3. 1 µA with the device identified by process letter P.
V
IL
Input low voltage –0.45 0.3 V
CC
V
V
IH
Input high voltage 0.7 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 1.5 mA, V
CC
= 2.5 V 0.4 V
V
OH
Output high voltage
V
CC
= 2.5 V and I
OH
= 0.4 mA or
V
CC
= 5 V and I
OH
= 2 mA
0.8 V
CC
V