Datasheet

DocID12276 Rev 20 33/52
M95256-W M95256-R M95256-DR M95256-DF DC and AC parameters
Table 13. Capacitance
Symbol Parameter Test conditions
(1)
1. Sampled only, not 100% tested, at T
A
= 25 °C and a frequency of 5 MHz.
Min. Max. Unit
C
OUT
Output capacitance (Q) V
OUT
= 0 V - 8 pF
C
IN
Input capacitance (D) V
IN
= 0 V - 8 pF
Input capacitance (other pins) V
IN
= 0 V - 6 pF
Table 14. Cycling performance by groups of four bytes
Symbol Parameter
(1)
1. Cycling performance for products identified by process letters KB.
Test conditions Min. Max. Unit
Ncycle Write cycle endurance
(2)
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N,
4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by
characterization and qualification.
TA ≤ 25 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 4,000,000
Write cycle
(3)
3. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID
instruction is decoded. When using the Byte Write, the Page Write or the WRID instruction,
refer also to Section 6.6.1: Cycling with Error Correction Code (ECC).
TA = 85 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 1,200,000
Table 15. Memory cell data retention
Parameter Test conditions Min. Unit
Data retention
(1)
1. For products identified by process letters KB. The data retention behavior is checked in
production. The 200-year limit is defined from characterization and qualification results.
TA = 55 °C 200 Year