Datasheet

DC and AC parameters M95256-W M95256-R M95256-DR M95256-DF
36/52 DocID12276 Rev 20
Table 18. DC characteristics (M95256-DF, device grade 6)
Symbol Parameter Test conditions
(1)
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
± 2 µA
I
LO
Output leakage
current
S
= V
CC
, voltage applied on Q = V
SS
or V
CC
± 2 µA
I
CC
Supply current
(Read)
V
CC
= 1.7 V, C = 0.1 V
CC
or 0.9 V
CC
,
at 5 MHz, Q = open
2mA
I
CC0
(2)
Supply current
(Write)
V
CC
= 1.7 V, during t
W
, S = V
CC
3mA
I
CC1
Supply current
(Standby)
V
CC
= 1.7 V, S = V
CC
, V
IN
= V
SS
or V
CC
1µA
V
IL
Input low voltage 1.7 V ≤ V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage 1.7 V ≤ V
CC
< 2.5 V 0.75 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 0.15 mA, V
CC
= 1.7 V 0.3 V
V
OH
Output high voltage I
OH
= –0.1 mA, V
CC
= 1.7 V 0.8 V
CC
V
1. If the application uses the M95256-DF devices at 2.5 V ≤ V
CC
≤ 5.5 V and –40 °C ≤ T
A
≤ +85 °C, please
refer to Table 16: DC characteristics (M95256-W, device grade 6), rather than to the above table.
2. Characterized only, not tested in production.