Datasheet

DocID12276 Rev 20 35/52
M95256-W M95256-R M95256-DR M95256-DF DC and AC parameters
Table 17. DC characteristics (M95256-R, M95256-DR, device grade 6)
Symbol Parameter Test conditions
(1)
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
± 2 µA
I
LO
Output leakage
current
S
= V
CC
, voltage applied on Q = V
SS
or V
CC
± 2 µA
I
CC
Supply current
(Read)
V
CC
= 1.8 V, C = 0.1 V
CC
or 0.9 V
CC
,
at 2 MHz, Q = open
1
(2)
mA
V
CC
= 1.8 V, C = 0.1 V
CC
or 0.9 V
CC
,
at 5 MHz, Q = open
2
(3)
I
CC0
(4)
Supply current
(Write)
V
CC
= 1.8 V, during t
W
, S = V
CC
3mA
I
CC1
Supply current
(Standby)
V
CC
= 1.8 V, S = V
CC
, V
IN
= V
SS
or V
CC
1
(5)
µA
V
IL
Input low voltage 1.8 V ≤ V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage 1.8 V ≤ V
CC
< 2.5 V 0.75 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 0.15 mA, V
CC
= 1.8 V 0.3 V
V
OH
Output high voltage I
OH
= –0.1 mA, V
CC
= 1.8 V 0.8 V
CC
V
1. If the application uses the M95256-R or M95256-DR device at 2.5 V ≤ V
CC
≤ 5.5 V and -40 °C ≤ TA ≤ +85 °C,
please refer to Table 16: DC characteristics (M95256-W, device grade 6), rather than to the above table.
2. Value tested only for previous M95256 devices identified by process letter A.
3. Only for M95256 devices identified by process letter K.
4. Characterized only, not tested in production.
5. 3 µA for previous M95256 devices identified by process letter A.