Datasheet

DocID022580 Rev 4 35/47
M95160 M95160-W M95160-R M95160-DF DC and AC parameters
46
Table 16. DC characteristics (M95160-R or M95160-DF, device grade 6)
Symbol Parameter
Test conditions in addition to those
defined in in Table 9 or Table 10 and
Table 11
(1)
Min. Max. Unit
I
LI
Input leakage current V
IN
= V
SS
or V
CC
-± 2µA
I
LO
Output leakage current S = V
CC
, voltage applied on Q = V
SS
or V
CC
-± 2µA
I
CC
Supply current (Read)
V
CC
= 1.8 V or 1.7 V, f
C
= 5 MHz,
C = 0.1 V
CC
/0.9 V
CC
, Q = open
-2
(2)
mA
I
CC0
(3)
Supply current (Write) V
CC
= 1.8 V or 1.7 V, during t
W
, S = V
CC
-5mA
I
CC1
Supply current (Standby)
V
CC
= 1.8 V or 1.7 V, S = V
CC
, V
IN
= V
SS
or
V
CC
-1µA
V
IL
Input low voltage V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage V
CC
< 2.5 V 0.75 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 0.15 mA, V
CC
= 1.8 V or 1.7 V - 0.3 V
V
OH
Output high voltage I
OH
= –0.1 mA, V
CC
= 1.8 V or 1.7 V 0.8 V
CC
-V
V
RES
(3)
Internal reset threshold
voltage
-1.0
(4)
1.65
(5)
V
1. If the application uses the M95160-R or M95160-DF devices with 2.5 V ≤ V
CC
≤ 5.5 V and -40 °C ≤ T
A
≤ +85 °C, please
refer to Table 15: DC characteristics (M95160-W, device grade 6), rather than to the above table.
2. 2 mA at 3.5 MHz for the devices identified with process letters G or S.
3. Characterized only, not tested in production.
4. 0.5 V with the device identified by process letter K.
5. 1.5 V with the device identified by process letter K.