Datasheet

M95128-W M95128-R M95128-DF DC and AC parameters
Doc ID 5798 Rev 16 35/49
Table 17. DC characteristics (M95128-R, device grade 6)
Symbol Parameter
Test conditions in addition to those
defined in Ta ble 10 and Tabl e 1 2
(1)
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
± 2 µA
I
LO
Output leakage
current
S
= V
CC
, voltage applied on Q = V
SS
or V
CC
± 2 µA
I
CC
Supply current
(Read)
V
CC
= 1.8V, C = 0.1V
CC
or 0.9 V
CC
,
at 2 MHz, Q = open
1
(2)
mA
V
CC
= 1.8V, C = 0.1V
CC
or 0.9 V
CC
,
at 5 MHz, Q = open
2
(3)
I
CC0
(4)
Supply current
(Write)
V
CC
= 1.8 V, during t
W
, S = V
CC
3mA
I
CC1
Supply current
(Standby)
V
CC
= 1.8 V, S = V
CC
, V
IN
= V
SS
or V
CC
1
(5)
µA
V
IL
Input low voltage 1.8 V ≤ V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage 1.8 V ≤ V
CC
< 2.5 V 0.75 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 0.15 mA, V
CC
= 1.8 V 0.3 V
V
OH
Output high voltage I
OH
= –0.1 mA, V
CC
= 1.8 V 0.8 V
CC
V
1. If the application uses the M95128-R device with 2.5 V < V
CC
< 5.5 V and -40 °C < TA < +85 °C, please refer to Table 16:
DC characteristics (M95128-W, device grade 6), rather than to the above table.
2. Value tested only for previous M95128 devices identified by process letter A.
3. Only for M95128 devices identified by process letter K.
4. Characterized only, not tested in production.
5. 3 µA for previous M95128 devices identified by process letter A.