Datasheet

DocID022540 Rev 2 33/44
M95080-W M95080-R M95080-DF DC and AC parameters
43
Figure 18. AC measurement I/O waveform
Table 11. AC measurement conditions
Symbol Parameter Min. Max. Unit
C
L
Load capacitance 30 pF
Input rise and fall times - 50 ns
Input pulse voltages 0.2 V
CC
to 0.8 V
CC
V
Input and output timing reference voltages 0.3 V
CC
to 0.7 V
CC
V
Table 12. Cycling performance
Symbol Parameter
(1)
1. Cycling performance for products identified by process letter K.
Test conditions Min. Max. Unit
Ncycle Write cycle endurance
TA ≤ 25 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 4,000,000
Write cycle
TA = 85 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 1,200,000
Table 13. Memory cell data retention
Parameter Test conditions Min. Unit
Data retention
(1)
1. For products identified by process letter K. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
TA = 55 °C 200 Year
Table 14. Capacitance
Symbol Parameter Test conditions
(1)
1. Sampled only, not 100% tested, at T
A
= 25 °C and a frequency of 5 MHz.
Min. Max. Unit
C
OUT
Output capacitance (Q) V
OUT
= 0 V - 8 pF
C
IN
Input capacitance (D) V
IN
= 0 V - 8 pF
Input capacitance (other pins) V
IN
= 0 V - 6 pF
AI00825C
0.8 V
CC
0.2 V
CC
0.7 V
CC
0.3 V
CC
Input and output
timing reference levels
Input voltage levels