Datasheet

DocID6512 Rev 12 33/45
M950x0-W M950x0-R M950x0-DF DC and AC parameters
44
Table 16. DC characteristics (M950x0-W, device grade 6)
Symbol Parameter
Test conditions in addition to those
defined in Table 9
Min. Max. Unit
I
LI
Input leakage
current
V
IN
= V
SS
or V
CC
-± 2µA
I
LO
Output leakage
current
S
= V
CC
, V
OUT
= V
SS
or V
CC
-± 2µA
I
CC
Supply current
(Read)
V
CC
= 2.5 V, f
C
= 5 MHz,
C = 0.1 V
CC
/0.9 V
CC,
Q = open
-2
mA
V
CC
= 2.5 V, f
C
= 10 MHz,
C = 0.1 V
CC
/0.9 V
CC,
Q = open
-2
V
CC
= 5.5 V, f
C
= 20 MHz,
C = 0.1 V
CC
/0.9 V
CC,
Q = open
-5
(1)
1. Only for the devices identified by process letter K.
I
CC0
(2)
2. Characterized only, not tested in production.
Supply current
(Write)
During t
W
, S = V
CC
, 2.5 V < V
CC
< 5.5 V - 5 mA
I
CC1
Supply current
(Standby)
S = V
CC
, V
CC
= 5.5 V, 
V
IN
= V
SS
or V
CC
,
-3
(3)
3. 2 µA for the devices identified by process letter G or S.
µA
S
= V
CC
, V
CC
= 2.5 V, 
V
IN
= V
SS
or V
CC
,
-2
(4)
4. 1 µA for the devices identified by process letter G or S.
V
IL
Input low voltage - –0.45 0.3 V
CC
V
V
IH
Input high voltage - 0.7 V
CC
V
CC
+1 V
V
OL
Output low voltage I
OL
= 1.5 mA, V
CC
= 2.5 V - 0.4 V
V
OH
Output high voltage
V
CC
= 2.5 V and I
OH
= 0.4 mA or
V
CC
= 5 V and I
OH
= 2 mA
0.8 V
CC
-V
V
RES
(2)
Internal reset
threshold voltage
-1.0
(5)
5. 0.5 V with the device identified by process letter K.
1.65
(6)
6. 1.5 V with the device identified by process letter K.
V