Datasheet

DocID5124 Rev 6 27/37
M93S46-W M93S56-W M93S66-W DC and AC parameters
Note: Sampled only, not 100% tested, at TA= 25 °C.
Table 7. Capacitance
Symbol Parameter Test condition Min. Max. Unit
C
OUT Output capacitance (Q) V
OUT
= 0 V - 5 pF
C
IN Input capacitance V
IN
= 0 V - 5 pF
Table 8. Memory cell data retention
(1)
1. For products identified by process letter K. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
Parameter Test conditions Min. Unit
Data retention TA = 55 °C 200 Year
Table 9. Cycling performance
(1)
1. Cycling performance for products identified by process letter K.
Symbol Parameter Test conditions Min. Max. Unit
Ncycle Write cycle endurance
TA ≤ 25 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 4,000,000
Write cycle
TA = 85 °C,
V
CC
(min) < V
CC
< V
CC
(max)
- 1,200,000