Datasheet

M48T201Y, M48T201V DC and AC parameters
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Table 13. DC characteristics
Sym Parameter Test condition
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70°C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
M48T201Y M48T201V
Unit–70 –85
Min Typ Max Min Typ Max
I
LI
(2)
2. RSTIN1 and RSTIN2 internally pulled-up to V
CC
through 100 KΩ resistor. WDI internally pulled-down to V
SS
through
100 KΩ resistor.
Input leakage current 0V ≤ V
IN
≤ V
CC
±1 ±1 µA
I
LO
(3)
3. Outputs deselected.
Output leakage
current
0V ≤ V
OUT
≤ V
CC
±1 ±1 µA
I
CC
Supply current Outputs open 8 15 4 10 mA
I
CC1
Supply current
(standby) TTL
E
= V
IH
53mA
I
CC2
Supply current
(standby) CMOS
E
= V
CC
–0.2 3 2 mA
I
BAT
Battery current OSC
ON
V
CC
= 0 V
575 800 575 800 nA
Battery current OSC
OFF
100 100 nA
V
IL
Input low voltage –0.3 0.8 –0.3 0.8 V
V
IH
Input high voltage 2.2 V
CC
+ 0.3 2.0 V
CC
+ 0.3 V
V
OL
Output low voltage I
OL
= 2.1 mA 0.4 0.4 V
Output low voltage
(open drain)
(4)
4. For IRQ/FT & RST pins (open drain).
I
OL
= 10 mA 0.4 0.4 V
V
OH
Output high voltage I
OH
= –1.0 mA 2.4 2.4 V
V
OHB
(5)
5. Conditioned outputs (E
CON
- G
CON
) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage
currents will reduce battery life.
V
OH
battery backup I
OUT2
= –1.0 µA 2.0 3.6 2.0 3.6 V
I
OUT1
(6)
6. External SRAM must match TIMEKEEPER
®
supervisor chip V
CC
specification.
V
OUT
current (active) V
OUT1
> V
CC
–0.3 100 70 mA
I
OUT2
V
OUT
current (battery
backup)
V
OUT2
> V
BAT
–0.3 100 100 µA
V
PFD
Power-fail deselect
voltage
4.1 4.35 4.5 2.7 2.9 3.0 V
V
SO
Battery backup
switchover voltage
3.0
V
PFD
–
100 mV
V
V
BAT
Battery voltage 3.0 3.0 V