Datasheet

DC and AC parameters M40SZ100W
16/20 DocID007528 Rev 4
Table 7. DC characteristics
Sym Parameter Test condition
(1)
1. Valid for ambient operating temperature: T
A
= –40 to 85 °C; V
CC
= 2.7 to 3.6 V (except where noted).
Min Typ Max Unit
I
CC
Supply current Outputs open 0.5 mA
I
CCDR
Data retention mode current
(2)
2. Measured with V
OUT
and E
CON
open.
50 200 nA
I
LI
(3)
3. RSTIN internally pulled-up to V
CC
through 100 k resistor.
Input leakage current 0 V  V
IN
 V
CC
±1 μA
Input leakage current (PFI) –25 2 25 nA
I
LO
(4)
4. Outputs deselected.
Output leakage current 0 V  V
OUT
 V
CC
±1 μA
I
OUT1
(5)
5. External SRAM must match SUPERVISOR chip V
CC
specification.
V
OUT
current (active) V
OUT
> V
CC
– 0.3 100 mA
I
OUT2
V
OUT
current (battery backup) V
OUT
> V
BAT
– 0.3 100 μA
V
BAT
Battery voltage 2.5 3.0 3.5
(6)
V
V
IH
Input high voltage 0.7V
CC
V
CC
+ 0.3 V
V
IL
Input low voltage –0.3 0.3V
CC
V
V
OH
Output high voltage
(6)
6. For PFO pin (CMOS).
I
OH
= –1.0 mA 2.4 V
V
OHB
V
OH
battery backup
(7)
7. Chip enable output (E
CON
) can only sustain CMOS leakage currents in the battery backup mode. Higher
leakage currents will reduce battery life.
I
OUT2
= –1.0 μA 2.5 2.9 3.5 V
V
OL
Output low voltage I
OL
= 3.0 mA 0.4 V
Output low voltage (open
drain)
(8)
8. For RST & BL pins (open drain).
I
OL
= 10 mA 0.4 V
V
PFD
Power-fail deselect voltage 2.55 2.60 2.70 V
V
PFI
PFI input threshold V
CC
= 3 V 1.225 1.250 1.275 V
PFI hysteresis PFI rising 20 70 mV
V
SO
Battery backup switchover
voltage
2.5 V