Datasheet

DC and AC parameters M24M02-DR
24/36 DocID18204 Rev 6
Table 9. Cycling performance by groups of four bytes
Symbol Parameter Test condition Max. Unit
Ncycle
Write cycle
endurance
(1)
1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N,
4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by
characterization and qualification.
TA ≤ 25 °C, V
CC
(min) < V
CC
<
V
CC
(max)
4,000,000
Write cycle
(2)
2. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or
a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or
the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and
Write cycling.
TA = 85 °C, V
CC
(min) < V
CC
< V
CC
(max) 1,200,000
Table 10. Memory cell data retention
Parameter Test condition Min. Unit
Data retention
(1)
1. The data retention behavior is checked in production. The 200-year limit is defined from
characterization and qualification results.
TA = 55 °C 200 Year