Datasheet

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF DC and AC parameters
Doc ID 4578 Rev 21 25/40
Figure 10. AC measurement I/O waveform
Table 11. Input parameters
Symbol Parameter
(1)
1. Characterized only, not tested in production.
Test condition Min. Max. Unit
C
IN
Input capacitance (SDA) 8 pF
C
IN
Input capacitance (other pins) 6 pF
Z
L
Input impedance (E2, E1, E0, WC)
(2)
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
V
IN
< 0.3 V
CC
30 kΩ
Z
H
V
IN
> 0.7 V
CC
500 kΩ
Table 12. Cycling performance by groups of four bytes
Symbol Parameter Test condition
(1)
1. Cycling performance for products identified by process letter K.
Max. Unit
Ncycle
Write cycle
endurance
(2)
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
TA ≤ 25 °C, V
CC
(min) < V
CC
< V
CC
(max) 4,000,000
Write cycle
(3)
3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling.
TA = 85 °C, V
CC
(min) < V
CC
< V
CC
(max) 1,200,000
Table 13. Memory cell data retention
Parameter Test condition Min. Unit
Data retention
(1)
1. For products identified by process letter K. The data retention behavior is checked in production. The 200-
year limit is defined from characterization and qualification results.
TA = 55 °C 200 Year
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