Datasheet
Table Of Contents
- 1 Description
- 2 Signal description
- 3 Memory organization
- 4 Device operation
- 5 Instructions
- 6 Initial delivery state
- 7 Maximum rating
- 8 DC and AC parameters
- Table 5. Operating conditions (voltage range W)
- Table 6. Operating conditions (voltage range R)
- Table 7. Operating conditions (voltage range F, for devices identified by process letter T)
- Table 8. Operating conditions (voltage range F, for all other devices)
- Table 9. AC measurement conditions
- Figure 11. AC measurement I/O waveform
- Table 10. Input parameters
- Table 11. Cycling performance
- Table 12. Memory cell data retention
- Table 13. DC characteristics (M24C08-W, device grade 6)
- Table 14. DC characteristics (M24C08-R, device grade 6)
- Table 15. DC characteristics (M24C08-F device)
- Table 16. 400 kHz AC characteristics
- Table 17. 100 kHz AC characteristics (I2C Standard mode)
- Figure 12. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
- Figure 13. AC waveforms
- 9 Package mechanical data
- Figure 14. TSSOP8 – 8-lead thin shrink small outline, package outline
- Table 18. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
- Figure 15. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
- Table 19. SO8N – 8-lead plastic small outline, 150 mils body width, package data
- Figure 16. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline
- Table 20. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package mechanical data
- Figure 17. UFDFPN8 (MLP8) – package outline (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Table 21. UFDFPN8 (MLP8) – package dimensions (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Figure 18. M24C08-FCS5TP/S WLCSP package outline
- Table 22. M24C08-FCS5TP/S WLCSP package data
- Figure 19. Thin M24C08-FCT5TP/S WLCSP package outline
- Table 23. Thin M24C08-FCT5TP/S WLCSP package data
- 10 Part numbering
- 11 Revision history

DocID023924 Rev 3 23/40
M24C08-W M24C08-R M24C08-F DC and AC parameters
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Table 11. Cycling performance
Symbol Parameter Test condition
(1)
1. Cycling performance for products identified by process letter T.
Max. Unit
Ncycle
Write cycle
endurance
T
A
≤ 25 °C, V
CC
(min) < V
CC
< V
CC
(max) 4,000,000
Write cycle
T
A
= 85 °C, V
CC
(min) < V
CC
< V
CC
(max) 1,200,000
Table 12. Memory cell data retention
Parameter Test condition Min. Unit
Data retention
(1)
1. For products identified by process letter T. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
T
A
= 55 °C 200 Year