Datasheet
Table Of Contents
- 1 Description
- 2 Signal description
- 3 Memory organization
- 4 Device operation
- 5 Instructions
- 6 Initial delivery state
- 7 Maximum rating
- 8 DC and AC parameters
- Table 5. Operating conditions (voltage range W)
- Table 6. Operating conditions (voltage range R)
- Table 7. Operating conditions (voltage range F, for devices identified by process letter T)
- Table 8. Operating conditions (voltage range F, for all other devices)
- Table 9. AC measurement conditions
- Figure 9. AC measurement I/O waveform
- Table 10. Input parameters
- Table 11. Cycling performance
- Table 12. Memory cell data retention
- Table 13. DC characteristics (M24C04-W, device grade 6)
- Table 14. DC characteristics (M24C04-R, device grade 6)
- Table 15. DC characteristics (M24C04-F device, grade 6 and grade 5)
- Table 16. 400 kHz AC characteristics
- Table 17. 100 kHz AC characteristics (I2C Standard mode)
- Figure 10. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
- Figure 11. AC waveforms
- 9 Package mechanical data
- Figure 12. TSSOP8 – 8-lead thin shrink small outline, package outline
- Table 18. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
- Figure 13. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
- Table 19. SO8N – 8-lead plastic small outline, 150 mils body width, package data
- Figure 14. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline
- Table 20. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package mechanical data
- Figure 15. UFDFPN8 (MLP8) – package outline (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Table 21. UFDFPN8 (MLP8) – package dimensions (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- 10 Part numbering
- 11 Revision history
DocID023994 Rev 3 33/34
M24C04-W M24C04-R M24C04-F Revision history
33
11 Revision history
Table 23. Document revision history
Date Revision Changes
17-Dec-2012 1
– New single product M24C04 datasheet resulting from splitting the
previous datasheet M24C08-x M24C04-x M24C02-x M24C01-x
(revision 18) into separate datasheets.
– Updated ESD value in Table 4 .
– Updated standby supply current values (I
CCI
) in Table 13, Table 14
and Table 15.
24-Jan-2013 2
Updated M24C04-F single supply voltage value in Features and
Supply current (Read) value in Table 13.
12-Sep-2013 3
Updated:
– M24C04-F single supply voltage value in Features
– Note
(1)
under Table 4: Absolute maximum ratings
– Section 5.1.2: Page Write
Added “I
CC0
Supply current (Write)” in Table 13: DC characteristics
(M24C04-W, device grade 6), Table 14: DC characteristics (M24C04-
R, device grade 6) and Table 15: DC characteristics (M24C04-F
device, grade 6 and grade 5).
Added: Table 7: Operating conditions (voltage range F, for devices
identified by process letter T), Table 8: Operating conditions (voltage
range F, for all other devices), Table 11: Cycling performance and
Table 12: Memory cell data retention.
Renamed Figure 15 and Table 21.