Datasheet
Table Of Contents
- 1 Description
- 2 Signal description
- 3 Memory organization
- 4 Device operation
- 5 Instructions
- 6 Initial delivery state
- 7 Maximum rating
- 8 DC and AC parameters
- Table 5. Operating conditions (voltage range W)
- Table 6. Operating conditions (voltage range R)
- Table 7. Operating conditions (voltage range F, for devices identified by process letter T)
- Table 8. Operating conditions (voltage range F, for all other devices)
- Table 9. AC measurement conditions
- Figure 9. AC measurement I/O waveform
- Table 10. Input parameters
- Table 11. Cycling performance
- Table 12. Memory cell data retention
- Table 13. DC characteristics (M24C04-W, device grade 6)
- Table 14. DC characteristics (M24C04-R, device grade 6)
- Table 15. DC characteristics (M24C04-F device, grade 6 and grade 5)
- Table 16. 400 kHz AC characteristics
- Table 17. 100 kHz AC characteristics (I2C Standard mode)
- Figure 10. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
- Figure 11. AC waveforms
- 9 Package mechanical data
- Figure 12. TSSOP8 – 8-lead thin shrink small outline, package outline
- Table 18. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
- Figure 13. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
- Table 19. SO8N – 8-lead plastic small outline, 150 mils body width, package data
- Figure 14. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline
- Table 20. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package mechanical data
- Figure 15. UFDFPN8 (MLP8) – package outline (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Table 21. UFDFPN8 (MLP8) – package dimensions (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- 10 Part numbering
- 11 Revision history

DocID023994 Rev 3 23/34
M24C04-W M24C04-R M24C04-F DC and AC parameters
33
Table 14. DC characteristics (M24C04-R, device grade 6)
Symbol Parameter
Test conditions
(1)
(in addition
to those in Table 6 and
Table 9)
1. If the application uses the voltage range R device with 2.5 V ≤ V
cc
≤ 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
Min. Max. Unit
I
LI
Input leakage current
(E2, E1, SCL, SDA)
V
IN
= V
SS
or
V
CC
, device in
Standby mode
-± 2µA
I
LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V
SS
or
V
CC
-± 2µA
I
CC
Supply current (Read) V
CC
= 1.8 V, f
c
= 400 kHz - 0.8 mA
I
CC0
Supply current (Write) During t
W
,
1.8V ≤ V
CC
< 2.5 V - 0.5
(2)
2. For devices identified by process letter T, value averaged over t
W
, characterized only (not tested in
production).
mA
I
CC1
Standby supply current
Device not selected
(3)
,
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
-1µA
V
IL
Input low voltage
(SCL, SDA, WC)
2.5 V ≤ V
CC
–0.45 0.3 V
CC
V
V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA, WC)
-0.7 V
CC
V
CC
+ 1 V
V
OL
Output low voltage I
OL
= 0.7 mA, V
CC
= 1.8 V - 0.2 V