Datasheet

DocID023994 Rev 3 21/34
M24C04-W M24C04-R M24C04-F DC and AC parameters
33
Figure 9. AC measurement I/O waveform
Table 10. Input parameters
Symbol Parameter
(1)
1. Characterized only, not tested in production.
Test condition Min. Max. Unit
C
IN
Input capacitance (SDA) - - 8 pF
C
IN
Input capacitance (other pins) - - 6 pF
Z
L
Input impedance (WC)
V
IN
< 0.3 V
CC
15 70 kΩ
Z
H
V
IN
> 0.7 V
CC
500 - kΩ
Table 11. Cycling performance
Symbol Parameter Test condition
(1)
1. Cycling performance for products identified by process letter T.
Max. Unit
Ncycle
Write cycle
endurance
TA ≤ 25 °C, V
CC
(min) < V
CC
< V
CC
(max) 4,000,000
Write cycle
TA = 85 °C, V
CC
(min) < V
CC
< V
CC
(max) 1,200,000
Table 12. Memory cell data retention
Parameter Test condition Min. Unit
Data retention
(1)
1. For products identified by process letter T. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
TA = 55 °C 200 Year
MS19774V1
0.8V
CC
0.2V
CC
0.7V
CC
0.3V
CC
Input and output
Timing reference levels
Input voltage levels