Datasheet
Table Of Contents
- 1 Description
- 2 Signal description
- 3 Memory organization
- 4 Device operation
- 5 Instructions
- 6 Initial delivery state
- 7 Maximum rating
- 8 DC and AC parameters
- Table 5. Operating conditions (voltage range W)
- Table 6. Operating conditions (voltage range R)
- Table 7. Operating conditions (voltage range F, for devices identified by process letter T)
- Table 8. Operating conditions (voltage range F, for all other devices)
- Table 9. AC measurement conditions
- Figure 9. AC measurement I/O waveform
- Table 10. Input parameters
- Table 11. Cycling performance
- Table 12. Memory cell data retention
- Table 13. DC characteristics (M24C01/02-W, device grade 6)
- Table 14. DC characteristics (M24C01/02-R, device grade 6)
- Table 15. DC characteristics (M24C02-F, device grade 6)
- Table 16. 400 kHz AC characteristics
- Table 17. 100 kHz AC characteristics (I2C Standard mode)
- Figure 10. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz
- Figure 11. AC waveforms
- 9 Package mechanical data
- Figure 12. TSSOP8 – 8-lead thin shrink small outline, package outline
- Table 18. TSSOP8 – 8-lead thin shrink small outline, package mechanical data
- Figure 13. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
- Table 19. SO8N – 8-lead plastic small outline, 150 mils body width, package data
- Figure 14. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline
- Table 20. PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package mechanical data
- Figure 15. UFDFPN8 (MLP8) – package outline (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- Table 21. UFDFPN8 (MLP8) – package dimensions (UFDFPN: Ultra thin Fine pitch Dual Flat Package, No lead)
- 10 Part numbering
- 11 Revision history

DC and AC parameters M24C01/02-W M24C01/02-R M24C02-F
24/34 DocID024020 Rev 2
Table 15. DC characteristics (M24C02-F, device grade 6)
Symbol Parameter
Test conditions
(1)
(in addition to
those in Table 7, Table 8 and
Table 9)
1. If the application uses the voltage range F device with 2.5 V ≤ V
cc
≤ 5.5 V , please refer to Table 13 instead
of this table.
Min. Max. Unit
I
LI
Input leakage current
(E2,E1, SCL, SDA)
V
IN
= V
SS
or
V
CC
, device in
Standby mode
-± 2µA
I
LO
Output leakage current V
OUT
= V
SS
or
V
CC,
SDA in Hi-Z, - ± 2 µA
I
CC
Supply current (Read)
V
CC
= 1.6 V
(2)
or 1.7 V,
f
c
= 400 kHz
2. 1.6 V for devices identified by process letter T.
-0.8mA
I
CC0
Supply current (Write) During t
W
, V
CC
≤ 1.8 V - 0.5
(3)
3. For devices identified by process letter T, value averaged over t
W
, characterized only (not tested in
production).
mA
I
CC1
Standby supply current
Device not selected
(4)
,
V
IN
= V
SS
or
V
CC
, V
CC
≤ 1.8 V
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
-1µA
V
IL
Input low voltage
(SCL, SDA, WC)
2.5 V ≤ V
CC
–0.45 0.3 V
CC
V
V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
V
CC
< 2.5 V 0.75 V
CC
6.5 V
Input high voltage
(WC
)
V
CC
< 2.5 V 0.75 V
CC
V
CC
+0.6 V
V
OL
Output low voltage I
OL
= 0.7 mA, V
CC
≤ 1.8 V - 0.2 V