Datasheet

M24512-W M24512-R M24512-DR M24512-DF DC and AC parameters
Doc ID 16459 Rev 26 27/40
Table 14. DC characteristics (M24512-R, M24512-DR, device grade 6)
Symbol Parameter
Test conditions
(1)
(in addition
to those in Tabl e 7)
1. If the application uses the voltage range R device with 2.5 V < V
cc
< 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
Min. Max. Unit
I
LI
Input leakage current
(, E1, E2, SCL, SDA)
V
IN
= V
SS
or V
CC
device in Standby mode
-± 2µA
I
LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V
SS
or V
CC
-± 2µA
I
CC
Supply current (Read)
V
CC
= 1.8 V, f
c
= 400 kHz - 0.8
(2)
2. For devices identified by process letters K: I
CC
(max) = 1.5 mA.
mA
f
c
= 1 MHz
(3)
3. Only for devices identified with process letter K.
-2.5mA
I
CC0
Supply current (Write) During t
W
-5
(4)
4. Characterized value, not tested in production.
mA
I
CC1
Standby supply current
Device not selected
(5)
,
V
IN
= V
SS
or V
CC
, V
CC
= 1.8 V
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
-1µA
V
IL
Input low voltage
(SCL, SDA, WC)
1.8 V ≤ V
CC
< 2.5 V –0.45 0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
1.8 V ≤ V
CC
< 2.5 V 0.75 V
CC
6.5 V
Input high voltage
(WC, E2, E1, E0)
1.8 V ≤ V
CC
< 2.5 V 0.75 V
CC
V
CC
+0.6 V
V
OL
Output low voltage I
OL
= 1 mA, V
CC
= 1.8 V - 0.2 V