Datasheet

Electrical characteristics LF253, LF353
4/15 Doc ID 2153 Rev 3
3 Electrical characteristics
Table 3. Electrical characteristics at V
CC
= ±15 V, T
amb
= +25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input offset voltage (R
s
= 10kΩ)
T
min
≤ T
amb
≤ T
max
310
13
mV
DV
io
Input offset voltage drift 10 µV/°C
I
io
Input offset current
(1)
T
min
≤ T
amb
≤ T
max
5 100
4
pA
nA
I
ib
Input bias current
(1)
T
min
≤ T
amb
≤ T
max
20 200
20
pA
nA
A
vd
Large signal voltage gain (R
L
= 2kΩ, V
o
= ±10V)
T
min
≤ T
amb
≤ T
max
50
25
200
V/mV
SVR
Supply voltage rejection ratio (R
S
= 10kΩ)
T
min
≤ T
amb
≤ T
max
80
80
86
dB
I
CC
Supply current, no load
T
min
≤ T
amb
≤ T
max
1.4 3.2
3.2
mA
V
icm
Input common mode voltage range
±11 +15
-12
V
CMR
Common mode rejection ratio (R
S
= 10kΩ)
T
min
≤ T
amb
≤ T
max
70
70
86
dB
I
OS
Output short-circuit current
T
min
≤ T
amb
≤ T
max
10
10
40 60
60
mA
±V
opp
Output voltage swing
R
L
= 2kΩ
R
L
= 10kΩ
T
min
≤ T
amb
≤ T
max
R
L
= 2kΩ
R
L
= 10kΩ
10
12
10
12
12
13.5
V
SR Slew rate, V
i
= 10V, R
L
= 2kΩ, C
L
= 100pF, unity gain 12 16 V/µs
t
r
Rise time, V
i
= 20mV, R
L
= 2kΩ, C
L
= 100pF, unity gain 0.1 µs
K
ov
Overshoot, V
i
= 20mV, R
L
= 2kΩ, C
L
= 100pF, unity gain 10 %
GBP Gain bandwidth product, f = 100kHz, V
in
= 10mV, R
L
= 2kΩ, C
L
= 100pF 2.5 4 MHz
R
i
Input resistance 10
12
Ω
THD
Total harmonic distortion, f= 1kHz, A
v
= 20dB, R
L
= 2kΩ, C
L
=100pF,
V
o
= 2V
pp
0.01 %
e
n
Equivalent input noise voltage
R
S
= 100Ω, f = 1KHz
15
∅m Phase margin 45 Degrees
V
o1
/V
o2
Channel separation (A
v
= 100) 120 dB
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
nV
Hz
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