Datasheet

Characteristics LCP1521S
4/10 DocID16804 Rev 3
Table 4. Parameters related to the diode LINE / GND (T
amb
= 25 °C)
Symbol Test conditions Max. Unit
V
F
I
F
= 5 A t = 500 µs 3 V
V
FP
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
R
S
= 10 Ω
R
S
= 10 Ω
R
S
= 62 Ω
5
9
30
V
Table 5. Parameters related to the protection thyristors (T
amb
= 25 °C)
Symbol Test conditions Min. Max. Unit
I
GT
V
LINE
= -48 V 0.1 5 mA
I
H
V
Gn
= -48 V 150 mA
V
GT
at I
GT
2.5 V
I
RG
V
RG
= -175 V
V
RG
= -175 V
T
j
= 25 °C
T
j
= 85 °C
5
50
µA
V
DGL
V
Gn
= -48 V
(1)
1. The oscillations with a time duration lower than 50 ns are not taken into account.
10/700 µs
1.2/50 µs
2/10 µs
1.5 kV
1.5 kV
2.5 kV
R
S
= 10 Ω
R
S
= 10 Ω
R
S
= 62 Ω
I
PP
= 30 A
I
PP
= 30 A
I
PP
= 38 A
7
10
25
V
Table 6. Parameters related to diode and protection thyristors (T
amb
= 25 °C)
Symbol Test conditions Typ. Max. Unit
I
R
V
Gn / LINE
= -1 V V
LINE
= -175 V
V
Gn / LINE
= -1 V V
LINE
= -175 V
T
j
= 25 °C
T
j
= 85 °C
5
50
µA
C
V
LINE
= -50 V, V
RMS
= 1 V, F = 1 MHz
V
LINE
= -2 V, V
RMS
= 1 V, F = 1 MHz
15
35
pF
Table 7. Recommended gate capacitance
Symbol Component Min. Typ. Max. Unit
C
G
Gate decoupling capacitance 100 220 nF