Datasheet

DocID15567 Rev 6 15/53
L99H01 Electrical specifications
52
Table 12. Inputs: CSN, CLK, PWM, DIR, EN and DI
Item Symbol Parameter Test condition Min. Typ. Max. Unit
12.1 V
in L
Low-level input voltage 0.3 * V
CC
0.4 * V
CC
V
12.2 V
in H
High-level input voltage 0.6 * V
CC
0.7 * V
CC
V
12.3 V
in Hyst
Input voltage hysteresis 0.1 * V
CC
V
12.4 I
CSN in
Pull-up current at input CSN V
CSN
=V
CC
-1.5V -50 -25 -10 µA
12.5 I
CLK in
Pull-down current at input
CLK
V
CLK
=1.5V 103550µA
12.6 I
DI in
Pull-down current at input DI V
DI
=1.5V 103550µA
12.7 I
DIR in
Pull-down current at input DIR V
DIR
=1.5V 103550µA
12.8 I
PWM in
Pull-down current at input
PWM
V
PWM
=1.5V 103550µA
12.9 R
EN in
Pull-down resistance at input
EN
V
EN
= V
CC
100 210 480 kΩ
12.10 C
in
(1)
Input capacitance at input
CSN, CLK, DI, DIR and PWM
0V<V
CC
<5.3V 10 15 pF
1. Value of input capacity is not measured in production test. Parameter guaranteed by design.
Table 13. Charge pump output
Item Symbol Parameter Test condition Min. Typ. Max. Unit
13.1.1
V
CP
Charge pump output
voltage
V
S
= 6 V; I
CP
= 15 mA V
S
+6 V
S
+7 V
S
+7.5 V
13.1.2 V
S
= 10 V; I
CP
= 15 mA V
S
+11 V
S
+12 V
S
+13.5 V
13.1.3 V
S
> 12 V; I
CP
= 15 mA V
S
+11 V
S
+12 V
S
+13.5 V
13.2 I
CP
Charge pump output
current
f
CP
= f
SYS_CLK
/ 32;
V
S
=14V; V
CP
=V
S
+10V
26 38 48 mA
13.3 V
CP_LOW
Charge pump low
threshold voltage
V
S
+4.5 V
S
+5 V
S
+5.5 V
13.4.1
f
SYS_CLK
Clock frequency
(internal oscillator)
V
CC
= 5 V 3 4 4.5 MHz
13.4.2 V
CC
= 3 V 2.4 3.3 3.5 MHz
13.5 T
CP
Charge pump low filter
time
64 µs