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L9997ND

DUAL HALF BRIDGE DRIVER

HALF BRIDGE OUTPUTS WITH TYPICAL

= 0.7

Ω

OUTPUT CURRENT CAPABILITY

1.2A

OPERATING SUPPLY VOLTAGE RANGE 7V

TO 16.5V

SUPPLY OVERVOLTAGE PROTECTION

FUNCTION FOR V

UP TO 40V

VERY LOW QUIESCENT CURRENT IN

STANDBY MODE < 1

CMOS COMPATIBLE INPUTS WITH HYS-

TERESIS

OUTPUT SHORT-CIRCUIT PROTECTION

THERMAL SHUTDOWN

REAL TIME DIAGNOSTIC: THERMAL OVER-

LOAD, OVERVOLTAGE

DESCRIPTION

The L9997ND is a monolithic integrated driver, in

BCD technology intended to drive various loads,

including DC motors. The circuit is optimized for

automotive electronics enviromental conditions.

September 2013

OUT1

OUT2

GND

IN1

IN2

DIAG

4...7, 14...17

VS VS

PROTECTION

FUNCTIONS

REFERENCE

BIAS

DRIVER 1

DRIVER 2

ENABLE

BLOCK DIAGRAM

SO20 (12+4+4)

ORDERING NUMBERS:

L9997ND

L999

7ND013TR

MULTIPOWER BCD TECHNOLOGY

1/9

DocID6276 Rev 3

Summary of content (9 pages)

PAGE 1
L9997ND ® DUAL HALF BRIDGE DRIVER HALF BRIDGE OUTPUTS WITH TYPICAL RON = 0.7Ω OUTPUT CURRENT CAPABILITY ±1.2A OPERATING SUPPLY VOLTAGE RANGE 7V TO 16.
PAGE 2
L9997ND ABSOLUTE MAXIMUM RATINGS Symbol Parameter VVSDC DC Supply Voltage VVSP IOUT VIN1,2 Supply Voltage Pulse (T < 400ms) DC Output Current VEN Value Unit -0.3 to 26 V 40 V A ±1.8 -0.3 to 7 -0.3 to 7 DC Input Voltage Enable Input Voltage VDIAG IOUT DC Output Voltage DC Output Short-circuit Current -0.3V < VOUT < VS + 0.3V internally limited -0.3 to 7 IDIAG DC Sink Current -0.3V < VDG < 7V internally limited V V V PIN CONNECTION (Top view) VS 1 20 N.C. OUT2 2 19 OUT1 N.C.
PAGE 3
L9997ND ELECTRICAL CHARACTERISTICS (7V < VS < 16.5V; -40°C < TJ < 150°C; unless otherwise specified.) Symbol Parameter Test Condition IVS_SB Quiescent Current in Standby Mode VEN < 0.3V; VVS <16.5V; Tj < 85°(*) VEN = 0; VVS = 14.
PAGE 4
L9997ND put transistor changes in the current regulation mode, see Fig.6, with the typical output current value below 2A. The SRC output power DMOS transistors requires a voltage drop ~3V to activate the current regulation. Below this voltage drop is the device also protected. The output current heat up the power DMOS transistor, the RDSON increases with the junction temperature and decreases the output current. The power dissipation in this condition can activate the thermal shutdown .
PAGE 5
L9997ND Figure 2. Timing Diagram. Standby Mode Operating Mode Overtemperature or Overvoltage Standby Mode EN IN1 IN2 DIAG t dLH t ONHL t dHL t dLH t dHL t OFFLH 90% OUT1 Tristate Tristate Tristate 10% tr t ONLH t dHL tf t dLH t dHL t dLH t OFFHL 90% Tristate 50% OUT2 Tristate Tristate 10% tr tf Figure 3.
PAGE 6
L9997ND Figure 4. Quiescent current in standby mode versus supply voltage. Figure 5. ON-Resistance versus supply voltage.
PAGE 7
L9997ND Figure 6. IOUT versus VOUT (pulsed measurement with TON = 500µs, TOFF = 500ms). Figure 7. Test circuit.
PAGE 8
L9997ND 8/9
PAGE 9
L9997ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.