Datasheet

Electrical characteristics L6591
10/41 Doc ID 14821 Rev 6
DIS function
I
OTP
Input bias current V
DIS
= 0 to Vth -1 µA
Vth Disable threshold 4.275 4.5 4.725 V
Oscillator and deadtime programming
f
osc
Oscillation frequency T
J
= 25 °C 170 180 190 kHz
Vcc = 9.2 to 22 V 168 180 192 kHz
Vpk Oscillator peak voltage
(1)
2.85 33.15 V
Vvy Oscillator valley voltage
(1)
0.75 0.9 1.05 V
T
dead
Deadtime
(V
HVG
high-to-low to V
LVG
low-to-high transition)
0.42
µs
C
T
= 1 nF 1.0
Deadtime (V
LVG
high-to-low
to V
HVG
low-to-high
transition)
0.42
C
T
= 1 nF 1.0
Soft-start
I
SSC
Charge current
T
J
= 25 °C, V
SS
< 1.5 V,
V
COMP
= 4 V
14 18 22
µA
T
J
= 25 °C, V
SS
> 1.5 V,
V
COMP
= V
COMPH
3.4 4.7 5.6
I
Ssdis
Discharge current V
SS
> 1.5 V 3.4 4.7 5.6 µA
V
Ssclamp
High saturation voltage V
COMP
= 4 V 2 V
V
SSDIS
Disable level
(2)
V
COMP
= V
COMPH
4.85 5 5.15 V
V
SSLAT
Latch-off level V
COMP
= V
COMPH
6.4 V
PFC_STOP function
I
leak
High level leakage current
V
PFC_STOP
= Vcc,
V
COMP
= 2 V
1 µA
V
L
Low saturation level
I
PFC_STOP
= 2 mA
V
COMP
= 1.5 V
0.1 V
Low-side gate driver (voltages referred to GND)
V
LVG L
Output low-voltage I
sink
= 200 mA 1.0 V
V
LVG H
Output high-voltage I
source
= 5 mA 12.8 13.3 V
I
sourcepk
Peak source current
(2)
-0.3 A
I
sinkpk
Peak sink current
(2)
0.8 A
Table 4. Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit