Datasheet

L6585DE Electrical characteristics
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Symbol Pin Parameter Test condition Min. Typ. Max. Unit
CTR pin
DIS CTR
Shutdown threshold Falling edge 0.75 V
Hysteresis 120 mV
PFOV CTR
Dynamic PFC over-
voltage
Rising edge 3.4 V
Hysteresis 140 mV
CTR
Available range as
tracking reference
Lower threshold (falling) 1.7 V
Hysteresis 120 mV
Higher threshold (rising) 3.4 V
Hysteresis 140 mV
PFC section – current sense comparator
I
CS
PFCS Input bias current V
CS
= 0 V -1 µA
t
LEB
PFCS Leading edge blanking
(2)
100 200 300 ns
V
CSstop
PFCS PFC stop threshold V
CTR
1.65 1.75 1.85 V
t
d(H-L)
PFCS Delay to output 120 ns
V
CSclamp
PFCS
Current sense reference
clamp
V
COMP
= Upper clamp 1 1.08 1.16 V
PFC section – zero current detector
V
ZCDH
ZCD Upper clamp voltage I
ZCD
= 2.5 mA 5 V
V
ZCDL
ZCD Lower clamp voltage I
ZCD
= -2.5 mA -0.3 0 0.3 V
V
ZCDA
ZCD
Arming voltage
(positive-going edge)
(2)
1.4 V
V
ZCDT
ZCD
Triggering voltage
(negative-going edge)
(2)
0.7 V
I
ZCDb
ZCD Input bias current V
ZCD
= 1 to 4.5 V 1 µA
I
ZCDsrc
ZCD Source current capability -4 mA
I
ZCDsnk
ZCD Sink current capability 4 mA
PFC section – gate driver
PFG Output high/low
I
SINK
= 10 mA 0.2 V
I
SOURCE
= 10 mA 14.5 V
tf PFG Fall time 40 90 ns
tr PFG Rise time 90 140 ns
I
SINK
PFG Peak sink current 475 600 mA
I
SOURCE
PFG Peak source current 200 300 mA
PFG Pull-down resistor 10 kΩ
Table 4. Electrical characteristics (continued)