Datasheet
L6566B Electrical characteristics
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Symbol Parameter Test condition Min Typ Max Unit
Zero current detector/ overvoltage protection
V
ZCDH
Upper clamp voltage I
ZCD
= 3 mA 5.4 5.7 6 V
V
ZCDL
Lower clamp voltage I
ZCD
= - 3 mA -0.4 V
V
ZCDA
Arming voltage
(1)
positive-going edge 85 100 115 mV
V
ZCDT
Triggering voltage
(1)
negative-going edge 30 50 70 mV
I
ZCD
Internal pull-up
V
COMP
< V
COMPSH
-1
µA
V
ZCD
< 2 V, V
COMP
= V
COMPHI
-130 -100 -70
I
ZCDsrc
Source current capability V
ZCD
= V
ZCDL
-3 mA
I
ZCDsnk
Sink current capability V
ZCD
= V
ZCDH
3mA
T
BLANK1
Turn-on inhibit time After gate-drive going low 2.5 µs
V
ZCDth
OVP threshold 4.85 5 5.15 V
T
BLANK2
OVP strobe delay After gate-drive going low 2 µs
Latched shutdown function
I
OTP
Input bias current V
DIS
= 0 to V
OTP
-1 µA
V
OTP
Disable threshold
(1)
4.32 4.5 4.68 V
Thermal shutdown
Vth Shutdown threshold 160 °C
Hys Hysteresis 50 °C
External oscillator (frequency modulation)
f
FMOD
Oscillation frequency C
MOD
= 0.1 µF 600 750 900 Hz
--- Usable frequency range 0.05 15 kHz
V
pk
Peak voltage
(3)
1.5 V
V
vy
Valley voltage 0.5 V
I
FMOD
Charge/discharge current 150 µA
Mode selection / slope compensation
MODE
th
Threshold for QR operation 3 V
SC
pk
Ramp peak
(MODE/SC = open)
R
S-COMP
= 3 kΩ to GND, GD
pin high, V
COMP
= 5 V
1.7 V
SC
vy
Ramp starting value
(MODE/SC = open)
R
S-COMP
= 3 kΩ to GND,
GD pin high
0.3 V
Ramp voltage
(MODE/SC = open)
GD pin low 0 V
Source capability
(MODE/SC = open)
V
S-COMP
=
V
S-COMPpk
0.8 mA
Table 4. Electrical characteristics (continued)