Datasheet

L6561
2/13
Table 2. Absolute Maximum Ratings
Figure 3. Pin Connection (Top view)
Table 3. Thermal Data
Table 4. Pin Description
(1) Parameter guaranteed by design, not tested in production.
Symbol Pin Parameter Value Unit
I
Vcc
8I
q
+ I
Z
; (I
GD
= 0) 30 mA
I
GD
7 Output Totem Pole Peak Current (2µs) ±700 mA
INV, COMP
MULT
1, 2, 3 Analog Inputs & Outputs -0.3 to 7 V
CS 4 Current Sense Input -0.3 to 7 V
ZCD 5 Zero Current Detector 50 (source)
-10 (sink)
mA
mA
P
tot
Power Dissipation @T
amb
= 50 °C (DIP-8)
(SO-8)
1
0.65
W
W
T
j
Junction Temperature Operating Range -40 to 150 °C
T
stg
Storage Temperature -55 to 150 °C
Symbol Parameter SO 8 MINIDIP Unit
R
th j-amb
Thermal Resistance Junction to ambient 150 100 °C/W
N. Name Function
1 INV Inverting input of the error amplifier. A resistive divider is connected between the output
regulated voltage and this point, to provide voltage feedback.
2 COMP Output of error amplifier. A feedback compensation network is placed between this pin and the
INV pin.
3 MULT Input of the multiplier stage. A resistive divider connects to this pin the rectified mains. A voltage
signal, proportional to the rectified mains, appears on this pin.
4 CS Input to the comparator of the control loop. The current is sensed by a resistor and the resulting
voltage is applied to this pin.
5 ZCD Zero current detection input. If it is connected to GND, the device is disabled.
6 GND Current return for driver and control circuits.
7 GD Gate driver output. A push pull output stage is able to drive the Power MOS with peak current of
400mA (source and sink).
8V
CC
Supply voltage of driver and control circuits.
INV
COMP
MULT
CS
1
3
2
4ZCD
GND
GD
V
CC
8
7
6
5
DIP8