Datasheet

Input logic L6388E
8/19 Doc ID 13991 Rev 3
5 Input logic
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG)
being active at the same time when both the logic input pins (LIN, HIN) are at a high logic
level. In addition, to prevent cross conduction of the external MOSFETs, after each output is
turned off, the other output cannot be turned on before a certain amount of time (DT) (see
Figure 3).
6 Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 5 a). In the L6388E, a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low-side driver (LVG), with a diode in series, as shown in
Figure 5 b. An internal charge pump (Figure 5 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid an undesirable turn-on.
6.1 C
BOOT
selection and charging
To choose the proper C
BOOT
value, the external MOSFET can be seen as an equivalent
capacitor. This capacitor C
EXT
is related to the MOSFET total gate charge:
Equation 1
The ratio between the capacitors C
EXT
and C
BOOT
is proportional to the cyclical voltage loss.
It must be:
C
BOOT
>>>C
EXT
E.g.: if Q
gate
is 30 nC and V
gate
is 10 V, C
EXT
is 3 nF. With C
BOOT
= 100 nF the drop is 300
mV.
If HVG must be supplied for a long period, the C
BOOT
selection must also take the leakage
losses into account.
E.g.: HVG steady-state consumption is typical 250 μA, so, if HVG T
ON
is 5 ms, C
BOOT
must
supply 1.25 μC to C
EXT
. This charge on a 1 μF capacitor means a voltage drop of 1.25 V.
The internal bootstrap driver offers important advantages: the external fast recovery diode
can be avoided (it usually has a high leakage current).
This structure can work only if V
OUT
is close to GND (or lower) and, at the same time, the
LVG is on. The charging time (T
charge
) of the C
BOOT
is the time in which both conditions are
fulfilled and it must be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS R
DS(on
)
(typical value:
125 Ω). This drop can be neglected at low switching frequency, but it should be taken into
account when operating at high switching frequency.
C
EXT
Q
gate
V
gate
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