Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsPMICsPMIC - gate drivers Non-inverting High AND low side, Autonomous SO 8

September 2008 Rev 2 1/15

L6387E

High-voltage high and low side driver

Features

■ High voltage rail up to 600 V

■ dV/dt immunity ±50 V/nsec in full temperature

range

■ Driver current capability:

– 400 mA source,

– 650 mA sink

■ Switching times 50/30 nsec rise/fall with 1nF

load

■ CMOS/TTL Schmitt trigger inputs with

hysteresis and pull down

■ Internal bootstrap diode

■ Outputs in phase with inputs

■ Interlocking function

Description

The L6387E is an high-voltage device,

manufactured with the BCD"OFF-LINE"

technology. It has a Driver structure that enables

to drive independent referenced N Channel Power

MOS or IGBT. The high side (Floating) Section is

enabled to work with voltage Rail up to 600V. The

Logic Inputs are CMOS/TTL compatible for ease

of interfacing with controlling devices.

DIP-8 SO-8

www.st.com

Figure 1. Block diagram

LOGIC

DETECTION

LEVEL

SHIFTER

BOOTSTRAP DRIVER

LVG

DRIVER

HIN

LIN

HVG

DRIVER

HVG

H.V.

TO LOAD

OUT

LVG

GND

D00IN1135

Vboot

Cboot

Summary of content (15 pages)

PAGE 1
L6387E High-voltage high and low side driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 400 mA source, – 650 mA sink Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down ■ Internal bootstrap diode ■ Outputs in phase with inputs ■ Interlocking function The L6387E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology.
PAGE 2
Contents L6387E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin connection . . . . . . . . . . . . . . . . .
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L6387E Electrical data 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vout Output voltage -3 to Vboot -18 V Vcc Supply voltage - 0.3 to +18 V Vboot Floating supply voltage -1 to 618 V Vhvg High side gate output voltage -1 to Vboot V Vlvg Low side gate output voltage -0.3 to Vcc +0.3 V Logic input voltage -0.3 to Vcc +0.
PAGE 4
Pin connection 2 L6387E Pin connection Figure 2. Pin connection (Top view) LIN 1 8 Vboot HIN 2 7 HVG VCC 3 6 OUT GND 4 5 LVG D97IN517A Table 4. Pin description N° Pin Type Function 1 LIN I Low side driver logic input 2 HIN I High side driver logic input 3 Vcc 4 GND 5 LVG (1) O Low side driver output 6 VOUT O High side driver floating reference 7 HVG (1) O High side driver output 8 Vboot Low voltage power supply Ground Bootstrap supply voltage 1.
PAGE 5
L6387E Electrical characteristics 3 Electrical characteristics 3.1 AC operation Table 5. Symbol 3.2 AC operation electrical characteristcs (VCC = 15V; TJ = 25°C) Pin Parameter Test condition Min Typ Max Unit ton 1 vs 5 High/low side driver turn-on 2 vs 7 propagation delay Vout = 0V 110 ns toff 1 vs 5 High/low side driver turn-off 2 vs 7 propagation delay Vout = 0V 105 ns tr 5, 7 Rise time CL = 1000pF 50 ns tf 5, 7 Fall time CL = 1000pF 30 ns DC operation Table 6.
PAGE 6
Input logic L6387E Table 6. Symbol DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C) Pin Parameter Test condition Min Typ Max Unit 1.5 V Logic inputs Low level logic threshold voltage Vil Vih 1,2 High level logic threshold voltage 3.6 Iih High level logic input current VIN = 15V Iil Low level logic input current VIN = 0V V 50 70 µA 1 µA 1.
PAGE 7
L6387E 5 Bootstrap driver Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 3 a). In the L6387E a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in Figure 3 b. An internal charge pump (Figure 3 b) provides the DMOS driving voltage.
PAGE 8
Bootstrap driver L6387E For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: 30nC V drop = --------------- ⋅ 125Ω ∼0.8V 5µs Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 3. Bootstrap driver DBOOT VS VBOOT H.V.
PAGE 9
L6387E Typical characteristic Figure 4. Typical rise and fall times vs load capacitance time (nsec) D99IN1054 250 Figure 5. Quiescent current vs supply voltage Iq (µA) 104 D99IN1055 200 Tr 103 150 Tf 100 102 50 0 10 0 1 2 3 4 5 C (nF) For both high and low side buffers @25˚C Tamb Figure 6. Turn on time vs temperature 2 0 Figure 7. 4 6 10 12 14 16 VS(V) Turn Off time vs temperature @ Vcc = 15V @ Vcc = 15V 200 200 150 Toff (ns) Ton (ns) 8 250 250 Typ. 100 50 150 Typ.
PAGE 10
Package mechanical data 7 L6387E Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
PAGE 11
L6387E Package mechanical data Figure 10. DIP-8 mechanical data and package dimensions mm inch DIM. MIN. A TYP. MAX. MIN. 3.32 TYP. MAX. 0.131 a1 0.51 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 0.020 D E 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L Z 3.18 OUTLINE AND MECHANICAL DATA 3.81 1.52 0.125 0.150 DIP-8 0.
PAGE 12
Package mechanical data L6387E Figure 11. SO-8 mechanical data and package dimensions mm inch DIM. MIN. TYP. A MAX. MIN. TYP. 1.750 MAX. 0.0689 A1 0.100 0.250 0.0039 A2 1.250 0.0492 b 0.280 0.480 0.0110 0.0189 c 0.170 0.230 0.0067 0.0091 D (1) E (2) E1 0.0098 4.800 4.900 5.000 0.1890 0.1929 0.1969 5.800 6.000 6.200 0.2283 0.2362 0.2441 3.900 4.000 0.1496 0.1535 0.1575 3.800 e 1.270 0.0500 h 0.250 0.500 0.0098 0.0197 L 0.400 1.270 0.0157 0.0500 L1 k ccc 1.
PAGE 13
L6387E 8 Order codes Order codes Table 8.
PAGE 14
Revision history 9 L6387E Revision history Table 9.
PAGE 15
L6387E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.