Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsPMICsPMIC - gate drivers Non-inverting High AND low side, Autonomous SO 14

July 2009 Doc ID 13989 Rev 2 1/18

L6386E

High-voltage high and low side driver

Features

■ High voltage rail up to 600 V

■ dV/dt immunity ±50 V/nsec in full temperature

range

■ Driver current capability:

– 400 mA source,

– 650 mA sink

■ Switching times 50/30 nsec rise/fall with 1 nF

load

■ CMOS/TTL Schmitt trigger inputs with

hysteresis and pull down

■ Under-voltage lock out on lower and upper

driving section

■ Integrated bootstrap diode

■ Outputs in phase with inputs

Description

The L6386E is an high-voltage device,

manufactured with the BCD “off-line” technology.

It has a driver structure that enables to drive

independent referenced channel power MOS or

IGBT. The high-side (floating) section is enabled

to work with voltage rail up to 600 V. The logic

inputs are CMOS/TTL compatible for ease of

interfacing with controlling devices.

DIP-14 SO-14

Figure 1. Block diagram

LOGIC

DETECTION

LEVEL

SHIFTER

DETECTION

LVG

DRIVER

HIN

HVG

DRIVER

HVG

H.V.

TO LOAD

OUT

LVG

PGND

D97IN520D

LIN

DIAG

VREF

BOOTSTRAP DRIVER

Vboot

CIN

BOOT

SGND

7 6

www.st.com

Summary of content (18 pages)

PAGE 1
L6386E High-voltage high and low side driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 400 mA source, – 650 mA sink SO-14 Description ■ Switching times 50/30 nsec rise/fall with 1 nF load ■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down ■ Under-voltage lock out on lower and upper driving section ■ Integrated bootstrap diode ■ Outputs in phase with inputs Figure 1.
PAGE 2
Contents L6386E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin connection . . . . . . . . . . . . . . . . .
PAGE 3
L6386E Electrical data 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vout Output voltage -3 to Vboot - 18 V Vcc Supply voltage - 0.3 to +18 V -1 to 618 V Vboot Floating supply voltage Vhvg High side gate output voltage - 1 to Vboot V Vlvg Low side gate output voltage -0.3 to Vcc +0.3 V Logic input voltage -0.3 to Vcc +0.3 V Vdiag Open drain forced voltage -0.3 to Vcc +0.
PAGE 4
Pin connection 2 L6386E Pin connection Figure 2. Pin connection (Top view) LIN 1 14 Vboot SD 2 13 HVG HIN 3 12 OUT VCC 4 11 N.C. DIAG 5 10 N.C. CIN 6 9 LVG SGND 7 8 PGND D97IN521A Table 4.
PAGE 5
L6386E Electrical characteristics 3 Electrical characteristics 3.1 AC operation VCC = 15 V; TJ = 25 °C ‘s Table 5.
PAGE 6
Electrical characteristics Table 6. Symbol L6386E DC operation electrical characteristics (continued) Pin Parameter Test condition Min Typ Max Unit Driving buffers section Iso 9, 13 High/low side source short circuit current VIN = Vih (tp < 10 μs) 300 400 mA Isi 9, 13 High/low side sink short circuit current VIN = Vil (tp < 10 μs) 500 650 mA Logic inputs Low level logic threshold voltage Vil Vih 1.5 1,2, High level logic threshold 3 voltage 3.
PAGE 7
L6386E 3.3 Electrical characteristics Timing diagram Figure 3. Input/output timing diagram HIN LIN SD HOUT LOUT VREF VCIN DIAG D97IN522A Note: SD active condition is latched until next negative IN edge.
PAGE 8
Bootstrap driver 4 L6386E Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386E a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage.
PAGE 9
L6386E Bootstrap driver For example: using a power MOS with a total gate charge of 30 nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 μs. In fact: 30nC V drop = --------------- ⋅ 125Ω ∼ 0.8V 5μs Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 4. Bootstrap driver DBOOT VS VBOOT VBOOT VS H.V. H.V.
PAGE 10
Typical characteristic 5 L6386E Typical characteristic Figure 5. Typical rise and fall times vs load capacitance time (nsec) Figure 6. Quiescent current vs supply voltage Iq (μA) 104 D99IN1054 250 D99IN1057 200 Tr 103 150 Tf 100 102 50 10 0 0 1 2 3 4 5 C (nF) For both high and low side buffers @25˚C Tamb Figure 7. Turn on time vs temperature Figure 8.
PAGE 11
L6386E Typical characteristic Figure 11. Shutdown time vs temperature Figure 12. VBOOT UV hysteresis 3 250 @ Vcc = 15V @ Vcc = 15V 2.5 Vbhys (V) tsd (ns0 200 150 Typ. 100 Typ. 2 1.5 50 0 -45 -25 0 25 50 Tj (°C) 75 100 1 125 Figure 13. VCC UV turn on threshold vs temperature -45 -25 0 25 50 Tj (°C) 75 100 125 Figure 14. Output source current vs temperature 15 1000 14 800 current (mA) Vccth1(V) @ Vcc = 15V 13 12 Typ. 600 Typ.
PAGE 12
Typical characteristic L6386E Figure 17. VCC UV hysteresis vs temperature 3 Vcchys (V) 2.5 Typ. 2 1.
PAGE 13
L6386E 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
PAGE 14
Package mechanical data L6386E Figure 18. DIP14 mechanical data and package dimensions mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L OUTLINE AND MECHANICAL DATA 3.3 0.130 DIP14 Z 14/18 1.27 2.54 0.050 0.
PAGE 15
L6386E Package mechanical data Figure 19. SO14 mechanical data and package dimensions mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 1.35 1.75 0.053 0.069 A1 0.10 0.30 0.004 0.012 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.01 D (1) 8.55 8.75 0.337 0.344 E 3.80 4.0 0.150 0.157 e 1.27 0.050 H 5.8 6.20 0.228 0.244 h 0.25 0.50 0.01 0.02 L 0.40 1.27 0.016 0.050 k ddd OUTLINE AND MECHANICAL DATA 0˚ (min.), 8˚ (max.) 0.10 0.
PAGE 16
Ordering information 7 L6386E Ordering information Table 7.
PAGE 17
L6386E 8 Revision history Revision history Table 8.
PAGE 18
L6386E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.