Datasheet

L6235
6/25
(6) Tested at 25°C in a restricted range and guaranteed by characterization.
(7) See Fig. 1.
(8) Measured applying a voltage of 1V to pin SENSE and a voltage drop from 2V to 0V to pin VREF.
(9) See Fig. 2.
Symbol Parameter Test Conditions Min Typ Max Unit
Switching Characteristics
t
D(on)EN
Enable to out turn-ON delay time
(7)
I
LOAD
= 2.8 A, Resistive Load 110 250 400 ns
t
D(off)EN
Enable to out turn-OFF delay time
(7 )
I
LOAD
= 2.8 A, Resistive Load 300 550 800 ns
t
D(on)IN
Other Logic Inputs to Output Turn-
ON delay Time
I
LOAD
= 2.8 A, Resistive Load 2 µs
t
D(off)IN
Other Logic Inputs to out Turn-OFF
delay Time
I
LOAD
= 2.8 A, Resistive Load 2 µs
t
RISE
Output Rise Time
(7)
I
LOAD
= 2.8 A, Resistive Load 40 250 ns
t
FALL
Output Fall Time
(7)
I
LOAD
= 2.8 A, Resistive Load 40 250 ns
t
DT
Dead Time 0.5 1 µs
f
CP
Charge Pump Frequency
Tj = -25 to 125°C
(6)
0.6 1 MHz
PWM Comparator and Monostable
I
RCOFF
Source current at pin RC
OFF
V
RCOFF
= 2.5 V 3.5 5.5 mA
V
OFFSET
Offset Voltage on Sense
Comparator
V
ref
= 0.5 V ±5 mV
t
prop
Turn OFF Propagation delay
(8)
V
ref
= 0.5 V 500 ns
t
blank
Internal Blanking Time on Sense
Comparator
1µs
t
ON(min)
Minimum on Time 1.5 2 µs
t
OFF
PWM RecirculationTime R
OFF
= 20kΩ ; C
OFF
=1nF 13 µs
R
OFF
= 100kΩ ; C
OFF
=1nF 61 µs
I
BIAS
Input Bias Current at pin VREF 10 µA
Tacho Monostable
I
RCPULSE
Source Current at pin RCPULSE V
RCPULSE
= 2.5V 3.5 5.5 mA
t
PULSE
Monostable of Time R
PUL
= 20kΩ ; C
PUL
=1nF 12 µs
R
PUL
= 100kΩ ; C
PUL
=1nF 60 µs
R
TACHO
Open Drain ON Resistance 40 60 Ω
Over Current Detection & Protection
I
SOVER
Supply Overcurrent Protection
Threshold
T
J
= -25 to 125°C
(6)
4.0 5.6 7.1 A
R
OPDR
Open Drain ON Resistance I
DIAG
= 4mA 40 60 Ω
I
OH
OCD high level leakage current V
DIAG
= 5V 1 µA
t
OCD(ON)
OCD Turn-ON Delay Time
(9)
I
DIAG
= 4mA; C
DIAG
< 100pF 200 ns
t
OCD(OFF)
OCD Turn-OFF Delay Time
(9)
I
DIAG
= 4mA; C
DIAG
< 100pF 100 ns
ELECTRICAL CHARACTERISTICS (continued)
(V
S
= 48V , T
amb
= 25 °C , unless otherwise specified)