Datasheet

5/21
L6205
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, V
s
= 48V, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
V
Sth(ON)
Turn-on Threshold 6.6 7 7.4 V
V
Sth(OFF)
Turn-off Threshold 5.6 6 6.4 V
I
S
Quiescent Supply Current All Bridges OFF;
T
j
= -25°C to 125°C
(7)
510mA
T
j(OFF)
Thermal Shutdown Temperature 165 °C
Output DMOS Transistors
R
DS(ON)
High-Side Switch ON Resistance T
j
= 25 °C 0.34 0.4 Ω
T
j
=125 °C
(7)
0.53 0.59 Ω
Low-Side Switch ON Resistance T
j
= 25 °C 0.28 0.34 Ω
T
j
=125 °C
(7)
0.47 0.53 Ω
I
DSS
Leakage Current EN = Low; OUT = V
S
2mA
EN = Low; OUT = GND -0.15 mA
Source Drain Diodes
V
SD
Forward ON Voltage I
SD
= 2.8A, EN = LOW 1.15 1.3 V
t
rr
Reverse Recovery Time I
f
= 2.8A 300 ns
t
fr
Forward Recovery Time 200 ns
Logic Input
V
IL
Low level logic input voltage -0.3 0.8 V
V
IH
High level logic input voltage 2 7 V
I
IL
Low Level Logic Input Current GND Logic Input Voltage -10 µA
I
IH
High Level Logic Input Current 7V Logic Input Voltage 10 µA
V
th(ON)
Turn-on Input Threshold 1.8 2.0 V
V
th(OFF)
Turn-off Input Threshold 0.8 1.3 V
V
th(HYS)
Input Threshold Hysteresis 0.25 0.5 V
Switching Characteristics
t
D(on)EN
Enable to out turn ON delay time
(8)
I
LOAD
=2.8A, Resistive Load 100 250 400 ns
t
D(on)IN
Input to out turn ON delay time I
LOAD
=2.8A, Resistive Load
(dead time included)
1.6 µs
t
RISE
Output rise time
(8)
I
LOAD
=2.8A, Resistive Load 40 250 ns
t
D(off)EN
Enable to out turn OFF delay time
(8)
I
LOAD
=2.8A, Resistive Load 300 550 800 ns