Datasheet

L5980 Application information
Doc ID 13003 Rev 6 27/42
5.5 Thermal considerations
The thermal design is important to prevent the thermal shutdown of device if junction
temperature goes above 150 °C. The three different sources of losses within the device are:
a) conduction losses due to the not negligible R
DS(on)
of the power switch; these are
equal to:
Equation 26
Where D is the duty cycle of the application and the maximum R
DS(on)
is 300 mΩ. Note that
the duty cycle is theoretically given by the ratio between V
OUT
an V
IN
, but actually it is quite
higher to compensate the losses of the regulator. So the conduction losses increases
compared with the ideal case.
b) switching losses due to power MOSFET turn ON and OFF; these can be
calculated as:
Equation 27
Where T
RISE
and T
FALL
are the overlap times of the voltage across the power switch (V
DS
)
and the current flowing into it during turn ON and turn OFF phases, as shown in Figure 16.
T
SW
is the equivalent switching time. For this device the typical value for the equivalent
switching time is 50 ns.
c) Quiescent current losses, calculated as:
Equation 28
where I
Q
is the quiescent current (I
Q
= 2.4 mA).
The junction temperature T
J
can be calculated as:
Equation 29
Where T
A
is the ambient temperature and P
TOT
is the sum of the power losses just seen.
R
thJA
is the equivalent thermal resistance junction to ambient of the device; it can be
calculated as the parallel of many paths of heat conduction from the junction to the ambient.
For this device the path through the exposed pad is the one conducting the largest amount
P
ON
R
DS on()
I
OUT
()
2
D⋅⋅=
P
SW
V
IN
I
OUT
T
RISE
T
FALL
+()
2
------------------------------------------ -
Fsw⋅⋅ ⋅ V
IN
I
OUT
T
SW
F
SW
⋅⋅⋅==
P
Q
V
IN
I
Q
⋅=
T
J
T
A
Rth
JA
P
TOT
⋅+=