Datasheet

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
s
Supply Voltage 28 V
V
i
Input Voltage V
s
V
i
Differential Input Voltage
±
V
s
I
o
DC Output Current 1 A
I
p
Peak Output Current (non repetitive) 1.5 A
P
tot
Power Dissipation at:
T
amb
= 80
°
C (L272), T
amb
= 50
°
C (L272M), T
case
= 90
°
C (L272D)
T
case
= 75
°
C (L272)
1.2
5
W
W
T
op
Operating Temperature Range (L272D) – 40 to 85
°
C
T
stg
, T
j
Storage and Junction Temperature – 40 to 150
°
C
ELECTRICAL CHARACTERISTICS (V
S
= 24V, T
amb
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
s
Supply Voltage 4 28 V
I
s
Quiescent Drain Current V
O
=
V
S
2
V
s
= 24V
V
s
= 12V
8
7.5
12
11
mA
mA
I
b
Input Bias Current 0.3 2.5
µ
A
V
os
Input Offset Voltage 15 60 mV
I
os
Input Offset Current 50 250 nA
SR Slew Rate 1
V/
µ
s
B Gain-bandwidth Product 350 kHz
R
i
Input Resistance 500
k
Ω
G
v
O. L. Voltage Gain f = 100Hz
f = 1kHz
60 70
50
dB
dB
e
N
Input Noise Voltage B = 20kHz 10
µ
V
I
N
Input Noise Current B = 20kHz 200 pA
CRR Common Mode Rejection f = 1kHz 60 75 dB
SVR Supply Voltage Rejection f = 100Hz, R
G
= 10k
Ω
, V
R
= 0.5V
V
s
= 24V
V
s
=
±
12V
V
s
=
±
6V
54
70
62
56
dB
V
o
Output Voltage Swing I
p
= 0.1A
I
p
= 0.5A 21
23
22.5
V
V
C
s
Channel Separation f = 1 kHz; R
L
=10
Ω
, G
v
= 30dB
V
s
= 24V
V
s
=
±
6V
60
60
dB
d Distortion
f = 1kHz, G
v
= 3 dB, V
s
= 24V, R
L
=
∞
0.5 %
T
sd
Thermal Shutdown Junction
Temperature
145
°
C
THERMAL DATA
Symbol Parameter Powerdip SO16 Minidip Unit
R
th j-case
Thermal Resistance Junction-pins Max. 15 – * 70
o
C/W
R
th j-amb
Thermal Resistance Junction-ambient Max. 70 – 100
o
C/W
R
th j-alumina
Thermal Resistance Junction-alumina Max. – ** 50 –
o
C/W
* Thermal resistance junction-pin 4
** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring
15x 20mm; 0.65mm thickness and infinite heatsink.
L272
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