Datasheet
Table Of Contents
- Figure 1. Functional diagram
- 1 Characteristics
- Table 1. Absolute ratings (Tamb = 25 C)
- Table 2. Electrical characteristics (Tamb = 25 C)
- Figure 2. Pulse waveform
- Figure 3. Typical peak pulse power versus exponential pulse duration
- Figure 4. Clamping voltage versus peak pulse current (exponential waveform 8/20 µs)
- Figure 5. Peak current IDC inducing open circuit of the wire for one input/output versus pulse duration (typical values)
- Figure 6. Junction capacitance versus reverse applied voltage for one input/output (typical values)
- Figure 7. Relative variation of leakage current versus junction temperature
- 2 Application information
- 3 Ordering information scheme
- 4 Package information
- 5 Ordering Information
- 6 Revision history
Characteristics ITAxxU1
2/8
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power (8/20 µs)
(1)
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
T
j
initial = T
amb
300 W
I
PP
Peak pulse current (8/20 µs)
(1)
T
j
initial = T
amb
40 A
I
2
tWire I
2
t value
(1)
0.6 A
2
s
T
j
Maximum operating junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
C Capacitance
Order code
V
BR
@ I
R
I
RM
@ V
RM
V
CL
@ I
PP
V
CL
@ I
PP
αTCV
F
@ I
F
min.
max.
max. 8/20 µs max. 8/20 µs max. max. max.
(1)
1. Between I/O pin and ground.
(1) (1) (2)
2. Between two input pins at 0 V Bias, F = 1 MHz.
VmAµAVVAVA10
-4
/ °C pF V A
ITA6V1U1 6.51 1 10 5 10 10 12 25 4 1500 1.3 1
V
CL
V
BR
V
RM
V
F
I
F
I
RM
I
PP
I
V