Datasheet

IRF630 / FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.67 4.17 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
9A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
160 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 200 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, T
C
= 125 °C
50 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.5 A
0.35 0.40 Ω
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max,
V
GS
=10V
9A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4.5 A
34 S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
540 700 pF
C
oss
Output Capacitance 90 120 pF
C
rss
Reverse Transfer
Capacitance
35 50 pF