Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsIRF630, MOSFET N channel 200V

1/9October 2001

IRF630

IRF630FP

N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP

MESH OVERLAY™ MOSFET

■ TYPICAL R

(on) = 0.35 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the compa-

ny’s consolidated strip layout-based MESH OVER-

LAY™ process. This technology matches and

improves the performances compared with standard

parts from various sources.

.APPLICATIONS

■ HIGH CURRENT SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC-AC CONVERTERS FOR TELECOM

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE V

DSS

DS(on)

IRF630 200 V < 0.40 Ω 9 A

IRF630FP 200 V < 0.40 Ω 9 A

Symbol Parameter Value Unit

IRF630 IRF630FP

Drain-source Voltage (V

= 0)

200 V

DGR

Drain-gate Voltage (R

= 20 kΩ)

200 V

Gate- source Voltage ± 20 V

Drain Current (continuos) at T

= 25°C

9 9 (**) A

Drain Current (continuos) at T

= 100°C

5.7 5.7 (**) A

(●)

Drain Current (pulsed) 36 36 A

TOT

Total Dissipation at T

= 25°C

75 30 W

Derating Factor 0.6 0.24 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 5 5 V/ns

ISO

Insulation Winthstand Voltage (DC) -- 2000 V

stg

Storage Temperature –65 to 150 °C

Max. Operating Junction Temperature 150 °C

(1)I

≤9A, di/dt ≤300A/µs, V

≤ V

(BR)DSS

, T

≤ T

JMAX.

(**) Limited only by Maximum Temperature Allowed

INTERNAL SCHEMATIC DIAGRAM

TO-220

TO-220FP

Summary of content (9 pages)

PAGE 1
IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE ■ ■ ■ ■ VDSS RDS(on) ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 3 2 1 TO-220 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
PAGE 2
IRF630 / FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max TO-220 TO-220FP 1.67 4.17 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.
PAGE 3
IRF630 / FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100 V, ID = 4.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 9 A, VGS = 10V Typ. Max. Unit 10 14 ns 15 20 ns 31 45 nC 7.
PAGE 4
IRF630 / FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9
PAGE 5
IRF630 / FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp.
PAGE 6
IRF630 / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig.
PAGE 7
IRF630 / FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.
PAGE 8
IRF630 / FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.
PAGE 9
IRF630 / FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice.